Redox-based memristive switching has been observed in many binary transition metal oxides and related compounds. Since, on the one hand, many recent reports utilize TiO(2) for their studies of the memristive phenomenon and, on the other hand, there is a long history of the electronic structure and the crystallographic structure of TiO(2) under the impact of reduction and oxidation processes, we selected this material as a prototypical material to provide deeper insight into the mechanisms behind memristive switching. In part I, we briefly outline the results of the historical and recent studies of electroforming and resistive switching of TiO(2)-based cells. We describe the (tiny) stoichiometrical range for TiO(2 - x) as a homogeneous compo...
Abstract Memristive devices with valence change mechanism (VCM) show promise for neuromorphic data p...
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming ...
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming ...
Combining delamination technique with conductive AFM, we have been able to reveal spatially resolved...
Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memo...
This dissertation describes the materials science of memristive switching in titanium dioxide. It di...
Recently, the resistive switching behavior in TiO$_{2}$ has drawn attention due to its application t...
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming ...
In this work, first principle calculations are employed to study the microstructure characteristics ...
Titanium dioxide (TiO2) is one of the most widely used materials in resistive switching applications...
The resistive switching effect in transition metal oxides allows for a dedicated manipulation of the...
The resistive switching effect in transition metal oxides allows for a dedicated manipulation of the...
The growing demand for non-volatile memories requires new concepts in data storage and mobile comput...
Resistive switching of thermally treated rutile single crystals with (110) orientation is studied. A...
Herein, we developed a series of Pt/TiO2/Pt/Ti/SiO2 resistive switching materials with a variation i...
Abstract Memristive devices with valence change mechanism (VCM) show promise for neuromorphic data p...
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming ...
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming ...
Combining delamination technique with conductive AFM, we have been able to reveal spatially resolved...
Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memo...
This dissertation describes the materials science of memristive switching in titanium dioxide. It di...
Recently, the resistive switching behavior in TiO$_{2}$ has drawn attention due to its application t...
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming ...
In this work, first principle calculations are employed to study the microstructure characteristics ...
Titanium dioxide (TiO2) is one of the most widely used materials in resistive switching applications...
The resistive switching effect in transition metal oxides allows for a dedicated manipulation of the...
The resistive switching effect in transition metal oxides allows for a dedicated manipulation of the...
The growing demand for non-volatile memories requires new concepts in data storage and mobile comput...
Resistive switching of thermally treated rutile single crystals with (110) orientation is studied. A...
Herein, we developed a series of Pt/TiO2/Pt/Ti/SiO2 resistive switching materials with a variation i...
Abstract Memristive devices with valence change mechanism (VCM) show promise for neuromorphic data p...
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming ...
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming ...