Spin-dependent scattering and the spin polarization of a diffusive current in partly disordered L1o-epitaxial FePd

We report magnetic domain wall (DW) resistance in epitaxial films of FePd. When equal numbers of Fe and Pd atoms are present, this material forms an ordered structure with alternating crystal planes of Fe and Pd. We prepared films enriched with Pd to varying degrees, gradually degrading this structure. As might be expected, this increased the electrical resistivity of the films by introducing extra defects that can scatter electrons. However, unexpectedly, the additional resistance arising from the similar to 10 nm thick DWs rose as a proportion of the overall resistivity, roughly doubling when halving the degree of chemical ordering-as determined from x-ray diffraction measurements-within the films. These data can be used to infer a rise in the spin polarization of the current flowing in the layers when extra Pd atoms are introduced. On the other hand, a separate measurement of spin polarization using a superconducting point contact technique that is insensitive to electron scattering revealed no changes as extra Pd was introduced. We conclude that Pd atoms scatter electrons of one spin far more strongly than the other, suggesting a possible means of producing highly spin-polarized currents for use in spintronic devices