We report on the electroforming in resistively switching nanocrosspoint devices made of a reactively sputtered TiO2 thin film between Pt and Ti/Pt electrodes, respectively. As most resistance switching materials, TiO2 needs to be electroformed before it can be switched. This paper presents and compares current and voltage controlled electroforming with regard to the polarity. We show that a current-driven electroforming with negative polarities leads into the switchable high resistive state without need for a current compliance. These devices show an improved stability and reliability in bipolar resistive switching performance
The continuing improved performance of the digital electronic devices requires new memory technologi...
The resistive switching characteristics of Pt/TiO2/W devices in a submicrometre via-hole structure a...
Titanium dioxide thin films (30 nm) are deposited on platinized substrates by atomic layer depositio...
Abnormal bipolar-like resistive changes are reported in TiO(2) thin films sandwiched between Pt top ...
Nanostructured Pt/TiO2/Ti/Pt crosspoint junctions with lateral dimensions as small as 100 X 100 nm(2...
Bipolar resistive switching (BRS) as well as unipolar resistive switching (URS) behaviors in Pt/27 n...
In this letter, bipolar resistive switching in TiO2-based memory elements deposited on CMOS-compatib...
We probe the resistive switching response of Au/TiO2/Cu junctions, on samples initialized using both...
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustab...
The bipolar resistive switching characteristics in polycrystalline TiO2 thin films after regular for...
Resistive switching characteristics of Pt/TiO2/W devices are investigated. TiO2 thin films are grown...
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustab...
Effect of the top electrode (TE) metal on the resistive switching of(TE)/TiO2/Pt structure was inves...
Recently, the resistive switching behavior in TiO$_{2}$ has drawn attention due to its application t...
In Pt/27 nm thick TiO2/Pt stacks bipolar and unipolar resistive switching (BRS, URS) behavior of wer...
The continuing improved performance of the digital electronic devices requires new memory technologi...
The resistive switching characteristics of Pt/TiO2/W devices in a submicrometre via-hole structure a...
Titanium dioxide thin films (30 nm) are deposited on platinized substrates by atomic layer depositio...
Abnormal bipolar-like resistive changes are reported in TiO(2) thin films sandwiched between Pt top ...
Nanostructured Pt/TiO2/Ti/Pt crosspoint junctions with lateral dimensions as small as 100 X 100 nm(2...
Bipolar resistive switching (BRS) as well as unipolar resistive switching (URS) behaviors in Pt/27 n...
In this letter, bipolar resistive switching in TiO2-based memory elements deposited on CMOS-compatib...
We probe the resistive switching response of Au/TiO2/Cu junctions, on samples initialized using both...
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustab...
The bipolar resistive switching characteristics in polycrystalline TiO2 thin films after regular for...
Resistive switching characteristics of Pt/TiO2/W devices are investigated. TiO2 thin films are grown...
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustab...
Effect of the top electrode (TE) metal on the resistive switching of(TE)/TiO2/Pt structure was inves...
Recently, the resistive switching behavior in TiO$_{2}$ has drawn attention due to its application t...
In Pt/27 nm thick TiO2/Pt stacks bipolar and unipolar resistive switching (BRS, URS) behavior of wer...
The continuing improved performance of the digital electronic devices requires new memory technologi...
The resistive switching characteristics of Pt/TiO2/W devices in a submicrometre via-hole structure a...
Titanium dioxide thin films (30 nm) are deposited on platinized substrates by atomic layer depositio...