Combining delamination technique with conductive AFM, we have been able to reveal spatially resolved morphology and conductance changes in TiO2 memristive junctions after electroforming and switching. Being able to distingusish between effects caused by electroforming and switching, respectively, we could demonstrate that electroforming results in the creation of localized conductance channels induced by oxgen evolution while subsequent resistive switching causes an additional conducting structure next to the forming spot. We observe that the lateral extent of this structure depends on the number of switching cycles indicating an ongoing breaking of existing and creation of neighbouring current channels during subsequent switching
The operating current regime is found to play a key role in determining the synaptic characteristic ...
Resistive random access memories (RRAMs) are considered as key enabling components for a variety of ...
Recently, the resistive switching behavior in TiO$_{2}$ has drawn attention due to its application t...
Pt/TiO2/Pt/Ti memristive devices were electrically formed to either the ON or OFF state using voltag...
Redox-based memristive switching has been observed in many binary transition metal oxides and relate...
Creation of nanometer-scale conductive filaments in resistive switching devices makes them appealing...
We probe the resistive switching response of Au/TiO2/Cu junctions, on samples initialized using both...
Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memo...
Flexible solution-processed memristors show different behaviour dependent on the choice of electrode...
Metal–insulator–metal (MIM) structures based on titanium dioxide have demonstrated reversible and no...
Abnormal bipolar-like resistive changes are reported in TiO(2) thin films sandwiched between Pt top ...
Titanium dioxide thin films (30 nm) are deposited on platinized substrates by atomic layer depositio...
The long-known resistive switching (RS) effect in thin film metal/insulator/metal (MIM) stacks has g...
Resistance switching devices based on transition metal oxides have generated significant research in...
International audienceMetal oxide-based resistive random access memory devices are highly attractive...
The operating current regime is found to play a key role in determining the synaptic characteristic ...
Resistive random access memories (RRAMs) are considered as key enabling components for a variety of ...
Recently, the resistive switching behavior in TiO$_{2}$ has drawn attention due to its application t...
Pt/TiO2/Pt/Ti memristive devices were electrically formed to either the ON or OFF state using voltag...
Redox-based memristive switching has been observed in many binary transition metal oxides and relate...
Creation of nanometer-scale conductive filaments in resistive switching devices makes them appealing...
We probe the resistive switching response of Au/TiO2/Cu junctions, on samples initialized using both...
Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memo...
Flexible solution-processed memristors show different behaviour dependent on the choice of electrode...
Metal–insulator–metal (MIM) structures based on titanium dioxide have demonstrated reversible and no...
Abnormal bipolar-like resistive changes are reported in TiO(2) thin films sandwiched between Pt top ...
Titanium dioxide thin films (30 nm) are deposited on platinized substrates by atomic layer depositio...
The long-known resistive switching (RS) effect in thin film metal/insulator/metal (MIM) stacks has g...
Resistance switching devices based on transition metal oxides have generated significant research in...
International audienceMetal oxide-based resistive random access memory devices are highly attractive...
The operating current regime is found to play a key role in determining the synaptic characteristic ...
Resistive random access memories (RRAMs) are considered as key enabling components for a variety of ...
Recently, the resistive switching behavior in TiO$_{2}$ has drawn attention due to its application t...