The influence of atmospheric contaminants oxygen and nitrogen on the performance of thin-film hydrogenated amorphous silicon (a-Si:H) solar cells grown by plasma-enhanced chemical vapor deposition at 13.56 MHz was systematically investigated. The question is addressed as to what degree of high base pressures (up to 10(-4) Torr) are compatible with the preparation of good quality amorphous silicon based solar cells. The data show that for the intrinsic a-Si: H absorber layer exists critical oxygen and nitrogen contamination levels (about 2 x 10(19) atoms/cm(3) and 4 x 10(18) atoms/cm(3), respectively). These levels define the minimum impurity concentration that causes a deterioration in solar cell performance. This critical concentration is ...
Silicon based multi-junction thin film solar cells suffer from light-induced degradation (LID) due t...
Hydrogenated amorphous silicon (a-Si:H) refers to a broad class of atomic configurations, sharing a ...
Hydrogenated amorphous silicon (a-Si: H) materials have received a great deal of attention for their...
This thesis deals with atmospheric contamination and cross contamination of boron (single chamber pr...
For hydrogenated amorphous silicon (a-Si:H) solar cells, the critical concentration of a given impur...
For different process conditions, series of hydrogenated amorphous silicon p-i-n solar cells with va...
Woerdenweber J, Merdzhanova T, Schmitz R, et al. Influence of base pressure and atmospheric contamin...
The influence of oxygen and nitrogen impurities on the performance of thin-film solar cells based on...
Several amorphous silicon (a-Si:H) deposition conditions have been reported to produce films that de...
Thin film silicon solar cells are produced by using plasma deposition techniques. With this techniqu...
To expand the range of applications for thin film solar cells incorporating hydrogenated amorphous s...
ABSTRACT: The present study aims at obtaining thin film amorphous silicon n-i-p solar cells with imp...
金沢大学理工研究域電子情報通信学系O, N, or C impurity was separately incorporated into a-Si:H films by hot-wall glow ...
In this study, we revisited the significance of the p/i interface for hydrogenated amorphous silicon...
The identification, content, and role of impurities in a-Si thin films are sources of speculation no...
Silicon based multi-junction thin film solar cells suffer from light-induced degradation (LID) due t...
Hydrogenated amorphous silicon (a-Si:H) refers to a broad class of atomic configurations, sharing a ...
Hydrogenated amorphous silicon (a-Si: H) materials have received a great deal of attention for their...
This thesis deals with atmospheric contamination and cross contamination of boron (single chamber pr...
For hydrogenated amorphous silicon (a-Si:H) solar cells, the critical concentration of a given impur...
For different process conditions, series of hydrogenated amorphous silicon p-i-n solar cells with va...
Woerdenweber J, Merdzhanova T, Schmitz R, et al. Influence of base pressure and atmospheric contamin...
The influence of oxygen and nitrogen impurities on the performance of thin-film solar cells based on...
Several amorphous silicon (a-Si:H) deposition conditions have been reported to produce films that de...
Thin film silicon solar cells are produced by using plasma deposition techniques. With this techniqu...
To expand the range of applications for thin film solar cells incorporating hydrogenated amorphous s...
ABSTRACT: The present study aims at obtaining thin film amorphous silicon n-i-p solar cells with imp...
金沢大学理工研究域電子情報通信学系O, N, or C impurity was separately incorporated into a-Si:H films by hot-wall glow ...
In this study, we revisited the significance of the p/i interface for hydrogenated amorphous silicon...
The identification, content, and role of impurities in a-Si thin films are sources of speculation no...
Silicon based multi-junction thin film solar cells suffer from light-induced degradation (LID) due t...
Hydrogenated amorphous silicon (a-Si:H) refers to a broad class of atomic configurations, sharing a ...
Hydrogenated amorphous silicon (a-Si: H) materials have received a great deal of attention for their...