Room-temperature LEDs, fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised with respect to methane (3.3 µm), carbon dioxide (4.3 µm) and nitric oxide (5.3 µm) optical detection. Output power as high as 50 µW (I = 1 A, 128 µs) and FWHM as small as 0.6 µm have been obtained for the first reported InAsSb LED emitting at 5.5 µm
A new type of mid-infrared LED module (LEDM) operating at 3.8 mu m is reported. The device was produ...
Mid-infrared (3--5 {micro}m) lasers and LED`s are being developed for use in chemical sensor systems...
The demand for efficient and cost-effective mid-infrared light-emitting diodes operating in the (3-6...
Room-temperature LEDs, fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised ...
Powerful (light emitting diodes) LEDs which exhibit more than 3.5 mW of output power at room tempera...
Mid-infrared (3--6 {micro}m) LED`s are being developed for use in chemical sensor systems. As rich, ...
The InAsSbP/InAs light emitting diodes LEDs grown by liquid phase epitaxy and tuned at several wave...
The InAsSbP/InAs light emitting diodes LEDs grown by liquid phase epitaxy and tuned at several wave...
We report on a powerful 4.6 mu m light emitting diode (LED), operating at room temperature, suitable...
We report on a powerful 4.6 mu m light emitting diode (LED), operating at room temperature, suitable...
A mid-infrared light-emitting diode (LED) operating at 3.6 mum with a pulsed output power as high as...
Room-temperature InAs/lnAsSb light emitting diodes (LEDs) have been investigated for use in gas sens...
We report on the superluminescence of an InAsSb light-emitting diode, operating at 4.6 mum, suitable...
Mid-infrared LEDs based on InGaAs, InAsSb(P) and InGaAsSb alloys with an emission band of 0.3–0.5 μm...
Mid-infrared LEDs based on InGaAs, InAsSb(P) and InGaAsSb alloys with an emission band of 0.3–0.5 μm...
A new type of mid-infrared LED module (LEDM) operating at 3.8 mu m is reported. The device was produ...
Mid-infrared (3--5 {micro}m) lasers and LED`s are being developed for use in chemical sensor systems...
The demand for efficient and cost-effective mid-infrared light-emitting diodes operating in the (3-6...
Room-temperature LEDs, fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised ...
Powerful (light emitting diodes) LEDs which exhibit more than 3.5 mW of output power at room tempera...
Mid-infrared (3--6 {micro}m) LED`s are being developed for use in chemical sensor systems. As rich, ...
The InAsSbP/InAs light emitting diodes LEDs grown by liquid phase epitaxy and tuned at several wave...
The InAsSbP/InAs light emitting diodes LEDs grown by liquid phase epitaxy and tuned at several wave...
We report on a powerful 4.6 mu m light emitting diode (LED), operating at room temperature, suitable...
We report on a powerful 4.6 mu m light emitting diode (LED), operating at room temperature, suitable...
A mid-infrared light-emitting diode (LED) operating at 3.6 mum with a pulsed output power as high as...
Room-temperature InAs/lnAsSb light emitting diodes (LEDs) have been investigated for use in gas sens...
We report on the superluminescence of an InAsSb light-emitting diode, operating at 4.6 mum, suitable...
Mid-infrared LEDs based on InGaAs, InAsSb(P) and InGaAsSb alloys with an emission band of 0.3–0.5 μm...
Mid-infrared LEDs based on InGaAs, InAsSb(P) and InGaAsSb alloys with an emission band of 0.3–0.5 μm...
A new type of mid-infrared LED module (LEDM) operating at 3.8 mu m is reported. The device was produ...
Mid-infrared (3--5 {micro}m) lasers and LED`s are being developed for use in chemical sensor systems...
The demand for efficient and cost-effective mid-infrared light-emitting diodes operating in the (3-6...