We describe the use of bulk acoustic mode in micromechanical silicon resonators operating at radio frequencies. Based on measured data from the fabricated resonator (f/sub r//spl sim/14 MHz, Q>100 000) we analyze the characteristic impedance and signal levels in such microdevices and compare the values with conventional quartz crystals. We find that the high impedance level of microresonators can be met with integration of the readout electronics and that silicon can accommodate significantly larger vibration energy densities than quartz. Based on the results, we anticipate a wide application range for the micromechanical bulk acoustic wave structures in future wireless communication devices and microsensors
The very significant growth of the wireless communication industry has spawned tremendous interest i...
The small size and integrability make the silicon micromechanical rf-resonators attractive component...
International audienceWe present results for full-electrical characterization of a 64 MHz silicon bu...
This paper details a bulk acoustic mode resonator fabricated in single-crystal silicon with a qualit...
e demonstrate a bulk acoustic mode silicon micromechanical resonator with the first eigen frequency ...
A micromechanical 13.1 MHz bulk acoustic mode (BAW) silicon resonator is demonstrated. The vibration...
A micromechanical 13.1-MHz bulk acoustic mode silicon resonator having a high quality factor (Q=130 ...
Continuous advancement in wireless technology and silicon microfabrication has fueled exciting growt...
ABSTRACT: Continuous advancement in wireless technology and silicon microfabrication has fueled exci...
Abstract- This paper presents a review of single crystal silicon bulk acoustic wave resonators and f...
With quality factors (Q) often exceeding 10,000, vibrating micromechanical resonators have emerged a...
With quality factors (Q) often exceeding 10,000, vibrating micromechanical res-onators have emerged ...
Nonlinear effects in single-crystal silicon microresonators are analyzed with the focus on mechanica...
The small size and integrability make the silicon micromechanical rf-resonators attractive component...
We report wireless actuation of a Lamb wave micromechanical resonator from a distance of over 1 m wi...
The very significant growth of the wireless communication industry has spawned tremendous interest i...
The small size and integrability make the silicon micromechanical rf-resonators attractive component...
International audienceWe present results for full-electrical characterization of a 64 MHz silicon bu...
This paper details a bulk acoustic mode resonator fabricated in single-crystal silicon with a qualit...
e demonstrate a bulk acoustic mode silicon micromechanical resonator with the first eigen frequency ...
A micromechanical 13.1 MHz bulk acoustic mode (BAW) silicon resonator is demonstrated. The vibration...
A micromechanical 13.1-MHz bulk acoustic mode silicon resonator having a high quality factor (Q=130 ...
Continuous advancement in wireless technology and silicon microfabrication has fueled exciting growt...
ABSTRACT: Continuous advancement in wireless technology and silicon microfabrication has fueled exci...
Abstract- This paper presents a review of single crystal silicon bulk acoustic wave resonators and f...
With quality factors (Q) often exceeding 10,000, vibrating micromechanical resonators have emerged a...
With quality factors (Q) often exceeding 10,000, vibrating micromechanical res-onators have emerged ...
Nonlinear effects in single-crystal silicon microresonators are analyzed with the focus on mechanica...
The small size and integrability make the silicon micromechanical rf-resonators attractive component...
We report wireless actuation of a Lamb wave micromechanical resonator from a distance of over 1 m wi...
The very significant growth of the wireless communication industry has spawned tremendous interest i...
The small size and integrability make the silicon micromechanical rf-resonators attractive component...
International audienceWe present results for full-electrical characterization of a 64 MHz silicon bu...