Bulk SrTiO3 is a quantum paraelectric in which an antiferrodistortive distortion below approximate to 105 K and quantum fluctuations at low temperature preclude the stabilization of a long-range ferroelectric state. However, biaxial mechanical stress, impurity doping, and Sr nonstoichiometry, among other mechanisms, are able to stabilize a ferroelectric or relaxor ferroelectric state at room temperature, which develops into a longer-range ferroelectric state below 250 K. In this paper, we show that epitaxial SrTiO3 thin films grown under tensile strain on DyScO3 exhibit a large reduction of thermal conductivity, approximate to 60% of at room temperature, with respect to identical strain-free or compressed films. The thermal conductivity sho...
Advances in complex oxide heteroepitaxy have highlighted the enormous potential of utilizing strain ...
SrTiO$_3$ is an incipient ferroelectric on the verge of a polar instability, which is avoided at low...
In this work we report for the first time measurements of the dielectric loss of single-crystal SrTi...
Bulk SrTiO3 is a quantum paraelectric in which an antiferrodistortive distortion below approximate t...
Bulk SrTiO3 is a quantum paraelectric in which an antiferrodistortive distortion below approximate t...
Bulk SrTiO3 is a quantum paraelectric in which an antiferrodistortive distortion below ≈105 K and qu...
Due to their tendency to form ionic states, transition metal oxides and especially SrTiO3 exhibit ex...
Magnetron sputtered and laser deposited SrTiO3 thin films are deposited on CeO2 buffered sapphire su...
Biaxial strain is known to induce ferroelectricity in thin films of nominally non-ferroelectric mate...
Biaxial strain is known to induce ferroelectricity in thin films of nominally non-ferroelectric mate...
Magnetron sputtered and laser deposited SrtiO(3) thin films are deposited on CeO2 buffered sapphire ...
The impact of strain on structure and ferroelectric properties of epitaxial SrTiO3 films on various ...
Strain can strongly modify the electronic characteristics of oxide materials. For instance the phase...
Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are usef...
Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are usef...
Advances in complex oxide heteroepitaxy have highlighted the enormous potential of utilizing strain ...
SrTiO$_3$ is an incipient ferroelectric on the verge of a polar instability, which is avoided at low...
In this work we report for the first time measurements of the dielectric loss of single-crystal SrTi...
Bulk SrTiO3 is a quantum paraelectric in which an antiferrodistortive distortion below approximate t...
Bulk SrTiO3 is a quantum paraelectric in which an antiferrodistortive distortion below approximate t...
Bulk SrTiO3 is a quantum paraelectric in which an antiferrodistortive distortion below ≈105 K and qu...
Due to their tendency to form ionic states, transition metal oxides and especially SrTiO3 exhibit ex...
Magnetron sputtered and laser deposited SrTiO3 thin films are deposited on CeO2 buffered sapphire su...
Biaxial strain is known to induce ferroelectricity in thin films of nominally non-ferroelectric mate...
Biaxial strain is known to induce ferroelectricity in thin films of nominally non-ferroelectric mate...
Magnetron sputtered and laser deposited SrtiO(3) thin films are deposited on CeO2 buffered sapphire ...
The impact of strain on structure and ferroelectric properties of epitaxial SrTiO3 films on various ...
Strain can strongly modify the electronic characteristics of oxide materials. For instance the phase...
Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are usef...
Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are usef...
Advances in complex oxide heteroepitaxy have highlighted the enormous potential of utilizing strain ...
SrTiO$_3$ is an incipient ferroelectric on the verge of a polar instability, which is avoided at low...
In this work we report for the first time measurements of the dielectric loss of single-crystal SrTi...