Fabrication and electrical transport characterization of high quality underdoped YBa2Cu3O7-δ nanowires

We present the fabrication and electrical transport characterization of underdoped YBa2Cu3O7-δnanowires. The nanowires have been realized without any protective capping layer and theyshow transport properties similar to those of the parent thin film, demonstrating that they havenot been damaged by the nanopatterning. The current-voltage characteristics of the underdopednanowires show large hysteretic voltage switching at the critical current, in contrast to theflux-flow like characteristics of optimally doped nanostructures, indicating the formation of aself-stabilizing hot spot. These results open up new possibilities for using the underdopednanowires as single photon detectors and for exploring the underdoped side of the YBa2Cu3O7-δphase diagram at the nanoscale