A new strategy is reported here to synthesize both nitrogen deficient and protonated graphitic carbon nitride (g-C3N4) nanosheets by the conjoint use of NH4Cl as a dynamic gas template together with hypophosphorous acid (H3PO2) as a doping agent. The NH4Cl treatment allows for the scalable production of protonated g-C3N4 nanosheets. With the corresponding co-addition of H3PO2, nitrogen vacancies, accompanied by both additional protons and interstitially-doped phosphorus, are introduced into the g-C3N4 framework, and the electronic bandgap of g-C3N4 nanosheets as well as their optical properties and hydrogen-production performance can be precisely tuned by careful adjustment of the H3PO2 treatment. This conjoint approach thereby results in i...
Insufficient active sites and fast charge carrier recombination are detrimental to photocatalytic ac...
A novel phosphorus and oxygen co-doped graphitic carbon nitride (sheetP-O-CNSSA) photocatalyst was s...
Graphitic carbon nitride (g-C3N4, CN) with nitrogen vacancies was synthesized by a controlled therma...
Recently, metal-free graphitic carbon nitride (g-C3N4) has been recognized as a potential candidate ...
Recently, metal-free graphitic carbon nitride (g-C3N4) has been recognized as a potential candidate ...
Recently, metal-free graphitic carbon nitride (g-C3N4) has been recognized as a potential candidate ...
Novel porous P-doped graphitic carbon nitride (g-C3N4) nanosheets were for the first time fabricated...
Novel porous P-doped graphitic carbon nitride (g-C3N4) nanosheets were for the first time fabricated...
Novel porous P-doped graphitic carbon nitride (g-C3N4) nanosheets were for the first time fabricated...
Novel porous P-doped graphitic carbon nitride (g-C3N4) nanosheets were for the first time fabricated...
Novel porous P-doped graphitic carbon nitride (g-C3N4) nanosheets were for the first time fabricated...
Vacancy engineering, that is, self-doping of vacancy in semiconductors, has become a commonly used s...
Vacancy engineering, that is, self-doping of vacancy in semiconductors, has become a commonly used s...
Porous structure, nitrogen defects and oxygen dopants are simultaneously introduced into the framewo...
Porous structure, nitrogen defects and oxygen dopants are simultaneously introduced into the framewo...
Insufficient active sites and fast charge carrier recombination are detrimental to photocatalytic ac...
A novel phosphorus and oxygen co-doped graphitic carbon nitride (sheetP-O-CNSSA) photocatalyst was s...
Graphitic carbon nitride (g-C3N4, CN) with nitrogen vacancies was synthesized by a controlled therma...
Recently, metal-free graphitic carbon nitride (g-C3N4) has been recognized as a potential candidate ...
Recently, metal-free graphitic carbon nitride (g-C3N4) has been recognized as a potential candidate ...
Recently, metal-free graphitic carbon nitride (g-C3N4) has been recognized as a potential candidate ...
Novel porous P-doped graphitic carbon nitride (g-C3N4) nanosheets were for the first time fabricated...
Novel porous P-doped graphitic carbon nitride (g-C3N4) nanosheets were for the first time fabricated...
Novel porous P-doped graphitic carbon nitride (g-C3N4) nanosheets were for the first time fabricated...
Novel porous P-doped graphitic carbon nitride (g-C3N4) nanosheets were for the first time fabricated...
Novel porous P-doped graphitic carbon nitride (g-C3N4) nanosheets were for the first time fabricated...
Vacancy engineering, that is, self-doping of vacancy in semiconductors, has become a commonly used s...
Vacancy engineering, that is, self-doping of vacancy in semiconductors, has become a commonly used s...
Porous structure, nitrogen defects and oxygen dopants are simultaneously introduced into the framewo...
Porous structure, nitrogen defects and oxygen dopants are simultaneously introduced into the framewo...
Insufficient active sites and fast charge carrier recombination are detrimental to photocatalytic ac...
A novel phosphorus and oxygen co-doped graphitic carbon nitride (sheetP-O-CNSSA) photocatalyst was s...
Graphitic carbon nitride (g-C3N4, CN) with nitrogen vacancies was synthesized by a controlled therma...