We analyze the noise in liquid-gated, room temperature, graphene quantum dots. These devices display extremely large noise amplitudes. The observed noise is explained in terms of a charge noise model by considering fluctuations in the applied source–drain and gate potentials. We show that the liquid environment and substrate have little effect on the observed noise and as such attribute the noise to charge trapping/detrapping at the disordered graphene edges. The trapping/detrapping of individual charges can be tuned by gating the device, which can result in stable two-level fluctuations in the measured current. These results have important implications for the use of electronic graphene nanodevices in single-molecule biosensing
This is an author's peer-reviewed final manuscript, as accepted by the publisher. The published arti...
In this letter, we present the results of systematic experimental investigations of the effect of di...
Bilayer graphene (BLG), endowed with its electrostatically tunable band gap, plays a special role in...
We report an experimental study of 1/f noise in liquid-gated graphene transistors. We show that the ...
Graphene tunnel junctions are a promising experimental platform for single molecule electronics and ...
Graphene, an atomically thin allotrope of carbon, shows promise for use as a biosensor due to its se...
Graphene tunnel junctions are a promising experimental platform for single molecule electronics and ...
We present a novel and comprehensive model of 1/f noise in nanoscale graphene devices that accounts ...
Graphene tunnel junctions are a promising experimental platform for single molecule electronics and ...
We present a low‐frequency electrical noise measurement in graphene based field effect transistors. ...
We present a low-frequency electrical noise measurement in graphene based field effect transistors. ...
Grain boundaries (GBs) are undesired in large area layered 2D materials as they degrade the device q...
This letter investigates the bias-dependent low frequency noise of single layer graphene field-effec...
Grain Boundaries (GBs) are undesired in large area layered 2D materials as they degrade the device q...
A top-gated graphene FET with an ultralow 1/<i>f</i> noise level of 1.8 × 10<sup>–12</sup> μm<sup>2<...
This is an author's peer-reviewed final manuscript, as accepted by the publisher. The published arti...
In this letter, we present the results of systematic experimental investigations of the effect of di...
Bilayer graphene (BLG), endowed with its electrostatically tunable band gap, plays a special role in...
We report an experimental study of 1/f noise in liquid-gated graphene transistors. We show that the ...
Graphene tunnel junctions are a promising experimental platform for single molecule electronics and ...
Graphene, an atomically thin allotrope of carbon, shows promise for use as a biosensor due to its se...
Graphene tunnel junctions are a promising experimental platform for single molecule electronics and ...
We present a novel and comprehensive model of 1/f noise in nanoscale graphene devices that accounts ...
Graphene tunnel junctions are a promising experimental platform for single molecule electronics and ...
We present a low‐frequency electrical noise measurement in graphene based field effect transistors. ...
We present a low-frequency electrical noise measurement in graphene based field effect transistors. ...
Grain boundaries (GBs) are undesired in large area layered 2D materials as they degrade the device q...
This letter investigates the bias-dependent low frequency noise of single layer graphene field-effec...
Grain Boundaries (GBs) are undesired in large area layered 2D materials as they degrade the device q...
A top-gated graphene FET with an ultralow 1/<i>f</i> noise level of 1.8 × 10<sup>–12</sup> μm<sup>2<...
This is an author's peer-reviewed final manuscript, as accepted by the publisher. The published arti...
In this letter, we present the results of systematic experimental investigations of the effect of di...
Bilayer graphene (BLG), endowed with its electrostatically tunable band gap, plays a special role in...