Atomic resolution imaging of nanoscale chemical expansion in PrxCe1-xO2-δ during in situ heating

Thin film non-stoichiometric oxides enable many high temperature applications including solid oxide fuel cells, actuators, and catalysis. Large concentrations of point defects (particularly, oxygen vacancies) enable fast ionic conductivity or gas exchange kinetics in these materials, but also manifest as coupling between lattice volume and chemical composition. This chemical expansion may be either detrimental or useful, especially in thin film devices that may exhibit enhanced performance through strain engineering or decreased operating temperatures. However, thin film non-stoichiometric oxides can differ from bulk counterparts in terms of operando defect concentrations, transport properties, and mechanical properties. Here we present an in situ investigation of atomic-scale chemical expansion in PrxCe1-xO2-δ (PCO), a mixed ionic-electronic conducting oxide relevant to electrochemical energy conversion and high temperature actuation. Through a combination of electron energy loss spectroscopy and transmission electron microscopy with in situ heating, we characterized chemical strains and changes in oxidation state in cross-sections of PCO films grown on yttria stabilized zirconia (YSZ) at temperatures reaching 650○C. We quantified, both statically and dynamically, the nanoscale chemical expansion induced by changes in PCO redox state as a function of position and direction relative to the film-substrate interface. Additionally, we observed dislocations at the film-substrate interface, as well as reduced cation localization to threading defects within PCO films. These results illustrate several key aspects of atomic-scale structure and mechanical deformation in non-stoichiometric oxide films that clarify distinctions between films and bulk counterparts, and that hold several implications for operando chemical expansion or "breathing" of such oxide films