Semiconductors nanowires have to potential to be building blocks for future nano-optoelectronic devices. We have recently demonstrated high performance THz photonic devices based on GaAs and InP nanowires. These include ultrafast optically switched modulators of THz radiation and single nanowire photoconductive detectors of THz pulses
Spectroscopy and imaging in the terahertz (THz) region of the electromagnetic spectrum has proven to...
We report about fabrication and characterization of semiconductor nanowire-based field effect transi...
We report on the development of nanowire-based field-effect transistors operating as high sensitivit...
In this work, we demonstrate novel THz detectors and modulators based on semiconductor nanowires. We...
Nanowires show unique promise for a multitude of optoelectronic devices, ranging from solar cells to...
III-V semiconductor nanowires combine the properties of III-V materials with the unique advantages o...
Terahertz time-domain spectroscopy (THz-TDS) has emerged as a powerful tool for materials characteri...
Semiconductor nanowires (NWs) represent an ideal building block for implementing rectifying diodes o...
Photoconductive terahertz detectors based on single GaAs/AlGaAs nanowire were designed, fabricated a...
© 2014 IEEE. Photoconductive terahertz detectors based on single GaAs/AlGaAs core-shell nanowire hav...
We report on the demonstration of Terahertz (THz) broadband detectors based on field effect transist...
Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength componen...
We have demonstrated phase sensitive detectors of coherent terahertz radiation that use single nanow...
Spectroscopy and imaging in the terahertz (THz) region of the electromagnetic spectrum has proven to...
We report about fabrication and characterization of semiconductor nanowire-based field effect transi...
We report on the development of nanowire-based field-effect transistors operating as high sensitivit...
In this work, we demonstrate novel THz detectors and modulators based on semiconductor nanowires. We...
Nanowires show unique promise for a multitude of optoelectronic devices, ranging from solar cells to...
III-V semiconductor nanowires combine the properties of III-V materials with the unique advantages o...
Terahertz time-domain spectroscopy (THz-TDS) has emerged as a powerful tool for materials characteri...
Semiconductor nanowires (NWs) represent an ideal building block for implementing rectifying diodes o...
Photoconductive terahertz detectors based on single GaAs/AlGaAs nanowire were designed, fabricated a...
© 2014 IEEE. Photoconductive terahertz detectors based on single GaAs/AlGaAs core-shell nanowire hav...
We report on the demonstration of Terahertz (THz) broadband detectors based on field effect transist...
Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength componen...
We have demonstrated phase sensitive detectors of coherent terahertz radiation that use single nanow...
Spectroscopy and imaging in the terahertz (THz) region of the electromagnetic spectrum has proven to...
We report about fabrication and characterization of semiconductor nanowire-based field effect transi...
We report on the development of nanowire-based field-effect transistors operating as high sensitivit...