Modeling of Transverse Propagation Delays in the GaAs/AlGaAs Modulation Doped Heterojunction Field Effect Transistors

Goel, Ashok K.
Xu, Wei

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Publication date

January 1993

DOI

10.1109/22.238551

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Abstract

We have developed a computer-efficient algorithm to calculate the transverse propagation delays in a GaAs/AlGaAs MODFET. The model includes the intrinsic as well as the extrinsic parameters of the MODFET. The dependences of these delays on the various MODFET parameters such as its gate length, width and the gate metal resistivity have been studied. © 1993 IEE

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Modeling of Transverse Propagation Delays in the GaAs/AlGaAs Modulation Doped Heterojunction Field Effect Transistors

Abstract

Extracted data

Modeling of Transverse Propagation Delays in the GaAs/AlGaAs Modulation Doped Heterojunction Field Effect Transistors

Abstract

Extracted data

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