We report growth and characterization of CdTe wires 30-400nm in diameter by the vapor-liquid-solid technique. Individual nanowires were placed on a movable piezotube, which allowed three-dimensional motion toward a scanning tunneling microscope (STM). A bias was applied to the STM tip in contact with the nanowire, and the morphological changes due to Joule heating were observed insitu using a transmission electron microscope (TEM) in real time. For thick CdTe wires (d \u3e ∼ 150nm), the process results in the growth of superfine nanowires (SFNWs) of 2-4nm diameter on the surface of the wire. Smaller diameter nanowires, in contrast, disintegrate under the applied bias before the complete evolution of SFNWs on the surface. © 2011 IOP Publish...
In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can b...
Semiconductor nanowires are studied by using transmission electron microscopy (TEM) based methods in...
We have investigated the growth of GaAs nanowires as a function of temperatures and source pressures...
We report growth and characterization of CdTe wires 30-400 nm in diameter by the vapor-liquid-solid ...
As the applications for inorganic nanowires continuously grow, studies on the stability of these str...
International audienceThe growth of ZnTe nanowires and ZnTe-CdTe nanowire heterostructures is studie...
ABSTRACTArrays of CdTe nanowires have been grown on conductive, flexible Mo substrates by the vapor-...
CdTe nanowires with controlled composition were cathodically electrodeposited using track-etched pol...
We report on the effect of CdCl2 treatment on CdTe microwires that were grown using a simple close-s...
Ion track, nanoporous membranes were employed as templates for the preparation of CdTe nanowires. Fo...
CdTe nanowires with controlled composition were cathodically electrodeposited using track-etched pol...
We present details on the CdTe nanowires formation, which were found to grow in a standard physiolog...
CdTe wires have been fabricated via a catalyst free method using the industrially scalable physical ...
We demonstrate the observation and measurement of simple nanoscale devices over their complete lifec...
We report on the formation mechanism of CdS nanosheets based upon extensive scanning electron micros...
In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can b...
Semiconductor nanowires are studied by using transmission electron microscopy (TEM) based methods in...
We have investigated the growth of GaAs nanowires as a function of temperatures and source pressures...
We report growth and characterization of CdTe wires 30-400 nm in diameter by the vapor-liquid-solid ...
As the applications for inorganic nanowires continuously grow, studies on the stability of these str...
International audienceThe growth of ZnTe nanowires and ZnTe-CdTe nanowire heterostructures is studie...
ABSTRACTArrays of CdTe nanowires have been grown on conductive, flexible Mo substrates by the vapor-...
CdTe nanowires with controlled composition were cathodically electrodeposited using track-etched pol...
We report on the effect of CdCl2 treatment on CdTe microwires that were grown using a simple close-s...
Ion track, nanoporous membranes were employed as templates for the preparation of CdTe nanowires. Fo...
CdTe nanowires with controlled composition were cathodically electrodeposited using track-etched pol...
We present details on the CdTe nanowires formation, which were found to grow in a standard physiolog...
CdTe wires have been fabricated via a catalyst free method using the industrially scalable physical ...
We demonstrate the observation and measurement of simple nanoscale devices over their complete lifec...
We report on the formation mechanism of CdS nanosheets based upon extensive scanning electron micros...
In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can b...
Semiconductor nanowires are studied by using transmission electron microscopy (TEM) based methods in...
We have investigated the growth of GaAs nanowires as a function of temperatures and source pressures...