A two-dimensional (2D) dislocation continuum theory is being introduced. The present theory adds elastic rotation, dislocation density, and background stress to the classical energy density of elasticity. This theory contains four material moduli. Two characteristic length scales are defined in terms of the four material moduli. Non-singular solutions of the stresses and elastic distortions of an edge dislocation are calculated. It has been pointed out that the elastic strain agrees well with experimental data found recently for an edge dislocation in graphene. © 2012 Elsevier B.V
A program using two-dimensional dislocation dynamics with anisotropic strain equations has been writ...
This thesis consists of two parts. The first part explores a 2-d edge dislocation model to demonstra...
There is a growing interest in the strain engineering of 2D materials for applications in semiconduc...
Strain fields, dislocations, and defects may be used to control electronic properties of graphene. B...
An analytical theory is presented for the dislocation (pentagon-heptagon pair) in graphene. In order...
We show that dislocations located at the edge of graphene cause different lattice deformations to th...
© the authors, CC BY 4.0Supplementary files for article Modelling of partial basal dislocation dipol...
In this work, we present an application of the theory of discrete dislocations of Ariza and Ortiz (2...
The movement of dislocations in a crystal is the key mechanism for plastic deformation in all materi...
The movement of dislocations in a crystal is the key mechanism for plastic deformation in all materi...
Since its monolayer exfoliation in 2004, graphene has been the focus of intense study revealing a mu...
Strain fields, dislocations, and defects may be used to control electronic properties of graphene. B...
he exceptional electronic, magnetic, and mechanical properties of graph-ene can be modulated by intr...
Constitutive rules are developed to include three-dimensional dislocation mechanisms, such as line t...
This thesis consists of two parts. The first part explores a 2-d edge dislocation model to demonstra...
A program using two-dimensional dislocation dynamics with anisotropic strain equations has been writ...
This thesis consists of two parts. The first part explores a 2-d edge dislocation model to demonstra...
There is a growing interest in the strain engineering of 2D materials for applications in semiconduc...
Strain fields, dislocations, and defects may be used to control electronic properties of graphene. B...
An analytical theory is presented for the dislocation (pentagon-heptagon pair) in graphene. In order...
We show that dislocations located at the edge of graphene cause different lattice deformations to th...
© the authors, CC BY 4.0Supplementary files for article Modelling of partial basal dislocation dipol...
In this work, we present an application of the theory of discrete dislocations of Ariza and Ortiz (2...
The movement of dislocations in a crystal is the key mechanism for plastic deformation in all materi...
The movement of dislocations in a crystal is the key mechanism for plastic deformation in all materi...
Since its monolayer exfoliation in 2004, graphene has been the focus of intense study revealing a mu...
Strain fields, dislocations, and defects may be used to control electronic properties of graphene. B...
he exceptional electronic, magnetic, and mechanical properties of graph-ene can be modulated by intr...
Constitutive rules are developed to include three-dimensional dislocation mechanisms, such as line t...
This thesis consists of two parts. The first part explores a 2-d edge dislocation model to demonstra...
A program using two-dimensional dislocation dynamics with anisotropic strain equations has been writ...
This thesis consists of two parts. The first part explores a 2-d edge dislocation model to demonstra...
There is a growing interest in the strain engineering of 2D materials for applications in semiconduc...