A comparative analysis for the results obtained by force and energetic approaches, which are used in calculations of equilibrium position of misfit dislocations near interfaces, is performed. It is shown that a correct utilization of both approaches leads to similar results for the models which do not consider the finite thickness of contacting phases. The peculiarities of the dislocation motion to the equilibrium stand‐off positions are considered in the framework of the force approach. In the case of climbing misfit dislocations local inelastic variation of the material volume caused by diffusive point defects is taken into account. This results in the calculated values of stand‐off distances which are in a good agreement with those obser...
Recent studies of buried interface α-Fe2O3(0001)/α-Al2O3 using high resolution transmission electron...
When α-Fe2O3 thin films are deposited on α-Al2O3(0 0 0 1) substrates using oxygen plasma assisted mo...
Vacancies and interstitials absorbed at Cu-Nb interfaces are shown to migrate by a multistage proces...
Peculiarities in the spatial distribution of misfit dislocations near the interfaces in heterophase ...
The role of the free surface in determining the equilibrium position of misfit dislocations in thin ...
Energetic, dynamic and kinetic reasons leading to the nonuniformity in misfit dislocation (MD) distr...
This paper presents the results of an atomistic model in which the misfit and the bond strength betw...
This paper presents the results of an atomistic model in which the misfit and the bond strength betw...
This paper presents the results of an atomistic model in which the misfit and the bond strength betw...
This paper presents the results of an atomistic model in which the misfit and the bond strength betw...
We investigate the formation of misfit dislocations in strained heteroepitaxial crystal growth and t...
The critical epilayer thickness for the formation of misfit dislocations at the interface between an...
International audienceThe introduction of a dislocation from one lateral surface of a two-dimensiona...
This process was considered theoretically. By using elasticity theory, the corresponding critical th...
The aim of the work is a detailed theoretical study of diffusion processes for vacancies and analysi...
Recent studies of buried interface α-Fe2O3(0001)/α-Al2O3 using high resolution transmission electron...
When α-Fe2O3 thin films are deposited on α-Al2O3(0 0 0 1) substrates using oxygen plasma assisted mo...
Vacancies and interstitials absorbed at Cu-Nb interfaces are shown to migrate by a multistage proces...
Peculiarities in the spatial distribution of misfit dislocations near the interfaces in heterophase ...
The role of the free surface in determining the equilibrium position of misfit dislocations in thin ...
Energetic, dynamic and kinetic reasons leading to the nonuniformity in misfit dislocation (MD) distr...
This paper presents the results of an atomistic model in which the misfit and the bond strength betw...
This paper presents the results of an atomistic model in which the misfit and the bond strength betw...
This paper presents the results of an atomistic model in which the misfit and the bond strength betw...
This paper presents the results of an atomistic model in which the misfit and the bond strength betw...
We investigate the formation of misfit dislocations in strained heteroepitaxial crystal growth and t...
The critical epilayer thickness for the formation of misfit dislocations at the interface between an...
International audienceThe introduction of a dislocation from one lateral surface of a two-dimensiona...
This process was considered theoretically. By using elasticity theory, the corresponding critical th...
The aim of the work is a detailed theoretical study of diffusion processes for vacancies and analysi...
Recent studies of buried interface α-Fe2O3(0001)/α-Al2O3 using high resolution transmission electron...
When α-Fe2O3 thin films are deposited on α-Al2O3(0 0 0 1) substrates using oxygen plasma assisted mo...
Vacancies and interstitials absorbed at Cu-Nb interfaces are shown to migrate by a multistage proces...