Carbon nanotubes are promising candidates for futuristic nanoelectronic applications. In this article, we present a comprehensive modeling and calculation of electrostatic capacitances for various metallic carbon nanotube systems that can be used to model interconnects in nanotechnology circuits. Capacitance results are provided for single walled, multiwalled and bundles of single-walled carbon nanotubes as functions of the various design parameters. Numerical computations were performed using the method of moments in conjunction with a Green\u27s function appropriate for the geometry of these interconnects
In future nanoscale integrated circuits, process technology scaling coupled with increasing operatin...
In this work, development of a voltage dependent resistance model for metallic carbon nanotubes is a...
Accurate electrostatics modeling of nanotubes (NTs)/nanowires (NWs) has significant implications for...
Carbon nanotubes are promising candidates for futuristic nanoelectronic applications due to their ex...
We introduce a vertical carbon nanotube capacitor with high capacitance per unit area. Using an elec...
Carbon nanotubes, especially the ones with diameters of the order of a few nanometers exhibit correl...
Abstract Electrical transport in metallic carbon nanotubes, especially the ones with diameters of th...
Purpose – To investigate the possible application of carbon nanotubes (CNTs) as interconnects and an...
With ab initio simulations based on a real-space nonequilibrium Green’s function formalism, we have ...
In this paper, a method to obtain the quantum capacitance of carbon nanotubes (CNTs) using ab initio...
Modeling nanoscale capacitance presents particular challenge because of dynamic contribution from el...
Abstract—This paper presents a comprehensive study of the ap-plicability of single-walled carbon nan...
In this paper, a new circuit model for the propagation of electric signals along carbon nanotube int...
Expressions for the “quantum capacitance ” are derived, and regimes are discussed in which this conc...
Abstract—Electromagnetic properties of finite planar arrays of infinite-length single-wall carbon na...
In future nanoscale integrated circuits, process technology scaling coupled with increasing operatin...
In this work, development of a voltage dependent resistance model for metallic carbon nanotubes is a...
Accurate electrostatics modeling of nanotubes (NTs)/nanowires (NWs) has significant implications for...
Carbon nanotubes are promising candidates for futuristic nanoelectronic applications due to their ex...
We introduce a vertical carbon nanotube capacitor with high capacitance per unit area. Using an elec...
Carbon nanotubes, especially the ones with diameters of the order of a few nanometers exhibit correl...
Abstract Electrical transport in metallic carbon nanotubes, especially the ones with diameters of th...
Purpose – To investigate the possible application of carbon nanotubes (CNTs) as interconnects and an...
With ab initio simulations based on a real-space nonequilibrium Green’s function formalism, we have ...
In this paper, a method to obtain the quantum capacitance of carbon nanotubes (CNTs) using ab initio...
Modeling nanoscale capacitance presents particular challenge because of dynamic contribution from el...
Abstract—This paper presents a comprehensive study of the ap-plicability of single-walled carbon nan...
In this paper, a new circuit model for the propagation of electric signals along carbon nanotube int...
Expressions for the “quantum capacitance ” are derived, and regimes are discussed in which this conc...
Abstract—Electromagnetic properties of finite planar arrays of infinite-length single-wall carbon na...
In future nanoscale integrated circuits, process technology scaling coupled with increasing operatin...
In this work, development of a voltage dependent resistance model for metallic carbon nanotubes is a...
Accurate electrostatics modeling of nanotubes (NTs)/nanowires (NWs) has significant implications for...