The use of GaP in the development of electronic devices for high temperature applications

Typescript (photocopy).The needs for electronic components operating at or above 275 C have been demonstrated. In order to meet these requirements, it was suggested that gallium phosphide (GaP) be used as the semiconducting material. This suggestion was based on the large energy band which GaP possess. Theoretically GaP should maintain its semiconducting properties up to 800 C. Using GaP, a process to fabricate diodes and transistors (MESFETs) has been developed. These devices have been verified as being functional at temperatures of up to 300 C and are the first devices of this type to be reported as having been fabricated on GaP. Additionally, the first reported GaP integrated circuit has also been fabricated using the above process and has been observed to be functional at temperatures of up to 250 C. Computer models have been developed to predict device behavior as a function of temperature and have been verified as being accurate in a comparison to experimental data