Add to ORKGWe report the first observation of s-like excited states of a double acceptor in a semiconductor. Measurements on two different liquid encapsulated Czochralski GaAs samples containing the 78-meV acceptor showed the first s-like excited state of this level to be split. We present a simple model which predicts the 1s¹2s¹ excited state of a double acceptor in GaAs to be split by 4.0 meV, in good agreement with our observed value of 2.6 meV
Bulk, liquid-encapsulated Czochralski GaAs may be reversibly changed from semiconducting (ρ~1 Ω cm) ...
A new photoexcitation band of the FR3 EPR signal in undoped semiinsulating GaAs has been discovered....
We show that the well-known 0.15-eV donor in bulk GaAs quenches under IR-light illumination and that...
We report the first observation of s-like excited states of a double acceptor in a semiconductor. Me...
We investigate the energy and symmetry of Zn and Be dopant-induced acceptor states in GaAs using cro...
Acceptors present in undoped p‐type conducting GaAs have been studied with photoluminescence, temper...
Two semi-insulating liquid-encapsulated Czochralski GaAs cyrstals, one Cr-doped and the other undope...
A photoluminescence study has been made of electrically reversible, bulk, liquid-encapsulated Czochr...
Four emission lines have been observed in high purity GaAs, which are associated with excitons bound...
We have measured the excited state levels of two different shallow acceptors in bulk‐grown GaAs, usi...
The photoluminescent spectra from high-quality GaAs crystals grown from the vapour phase reveal a do...
Optical spectroscopy of impurity levels in GaAs is discussed with special emphasis on acceptors. Pho...
The exciton bound (BE) at the shallow Be acceptor confined in a narrow GaAs/AlGaAs quantum well (QW)...
Ga-rich GaAs shows two levels at (Esubv plus 78 meV) and (Esubv plus 203 meV) due to a He-like doubl...
Raman spectroscopy with sub-band-gap excitation has revealed electronic transitions at the 68-meV ac...
Bulk, liquid-encapsulated Czochralski GaAs may be reversibly changed from semiconducting (ρ~1 Ω cm) ...
A new photoexcitation band of the FR3 EPR signal in undoped semiinsulating GaAs has been discovered....
We show that the well-known 0.15-eV donor in bulk GaAs quenches under IR-light illumination and that...
We report the first observation of s-like excited states of a double acceptor in a semiconductor. Me...
We investigate the energy and symmetry of Zn and Be dopant-induced acceptor states in GaAs using cro...
Acceptors present in undoped p‐type conducting GaAs have been studied with photoluminescence, temper...
Two semi-insulating liquid-encapsulated Czochralski GaAs cyrstals, one Cr-doped and the other undope...
A photoluminescence study has been made of electrically reversible, bulk, liquid-encapsulated Czochr...
Four emission lines have been observed in high purity GaAs, which are associated with excitons bound...
We have measured the excited state levels of two different shallow acceptors in bulk‐grown GaAs, usi...
The photoluminescent spectra from high-quality GaAs crystals grown from the vapour phase reveal a do...
Optical spectroscopy of impurity levels in GaAs is discussed with special emphasis on acceptors. Pho...
The exciton bound (BE) at the shallow Be acceptor confined in a narrow GaAs/AlGaAs quantum well (QW)...
Ga-rich GaAs shows two levels at (Esubv plus 78 meV) and (Esubv plus 203 meV) due to a He-like doubl...
Raman spectroscopy with sub-band-gap excitation has revealed electronic transitions at the 68-meV ac...
Bulk, liquid-encapsulated Czochralski GaAs may be reversibly changed from semiconducting (ρ~1 Ω cm) ...
A new photoexcitation band of the FR3 EPR signal in undoped semiinsulating GaAs has been discovered....
We show that the well-known 0.15-eV donor in bulk GaAs quenches under IR-light illumination and that...