Strong Hot Carrier Effects in Single Nanowire Heterostructures

We use transient Rayleigh scattering to study the thermalization of hot photoexcited carriers in single GaAs0.7Sb0.3/InP nanowire heterostructures. By comparing the energy loss rate in single core-only GaAs0.7Sb0.3 nanowires which do not show substantial hot carrier effects with the core–shell nanowires, we show that the presence of an InP shell substantially suppresses the longitudinal optical phonon emission rate at low temperatures which then leads to strong hot carrier effects.We acknowledge the financial support of the NSF through Grants DMR 1507844, DMR 1531373, and ECCS 1509706 and also the financial support of the Australian Research Council. The Australian National Fabrication Facility is acknowledged for access to the growth facility used in this work. A.A.B. acknowledges the support of DARPA project W911NF18-1-0041. X.M.Y. thanks the National Natural Science Foundation of China for financial support (No. 51702368)