We summarize a continuing investigation into using ion implantation to alter the transition temperature of superconducting thin films. The primary motivation for the work presented here was to study the feasibility of using magnetic ion doping to replace the bi-layer Tc control process currently used for certain cryogenic detector applications at National Institute for Standards and Technology. The results from work with various ion species implanted into aluminum, molybdenum, titanium and tungsten host films are presented
Transition-edge sensors (TES) are superconducting devices used for detecting particles and electroma...
We have measured the effects of dilute magnetic-atom doping on the superconducting transition temper...
A superconducting Transition-Edge Sensor (TES) with low- T c is essential in high resolution calorim...
The superconducting transition temperature of more than 30 thin-film tungsten samples was measured u...
We have studied the inhibition of superconductivity in high-temperature superconductors oxide films ...
Using a recent modification of the Orsay ion implantor, Al, O, He, H and D were implanted into Al th...
We have developed a technique for precisely tuning the transition temperature of superconducting tun...
Ion implantation of Si and Ge in Al thin films at 8 K produces alloys exhibiting enhanced supercondu...
For making trilayer superconducting devices based on YBa2Cu3O7-delta (YBCO) thin film processing, we...
For making trilayer superconducting devices based on YBa2Cu 3O7-δ (YBCO) thin film processing, we de...
For making trilayer superconducting devices based on YBa2Cu 3O7-? (YBCO) thin film processing, we de...
Ion implantation is used to modify the properties of oxide (YBCO and YSZ) thin films. Both supercond...
The work has been directed towards the investigation of the ion implantation doping effects in thin ...
The applications of low energy argon or oxygen ion-beam assisted deposition and high energy oxygen i...
Tungsten thin films can form in one of two crystal structures: alpha (bcc), with a superconducting t...
Transition-edge sensors (TES) are superconducting devices used for detecting particles and electroma...
We have measured the effects of dilute magnetic-atom doping on the superconducting transition temper...
A superconducting Transition-Edge Sensor (TES) with low- T c is essential in high resolution calorim...
The superconducting transition temperature of more than 30 thin-film tungsten samples was measured u...
We have studied the inhibition of superconductivity in high-temperature superconductors oxide films ...
Using a recent modification of the Orsay ion implantor, Al, O, He, H and D were implanted into Al th...
We have developed a technique for precisely tuning the transition temperature of superconducting tun...
Ion implantation of Si and Ge in Al thin films at 8 K produces alloys exhibiting enhanced supercondu...
For making trilayer superconducting devices based on YBa2Cu3O7-delta (YBCO) thin film processing, we...
For making trilayer superconducting devices based on YBa2Cu 3O7-δ (YBCO) thin film processing, we de...
For making trilayer superconducting devices based on YBa2Cu 3O7-? (YBCO) thin film processing, we de...
Ion implantation is used to modify the properties of oxide (YBCO and YSZ) thin films. Both supercond...
The work has been directed towards the investigation of the ion implantation doping effects in thin ...
The applications of low energy argon or oxygen ion-beam assisted deposition and high energy oxygen i...
Tungsten thin films can form in one of two crystal structures: alpha (bcc), with a superconducting t...
Transition-edge sensors (TES) are superconducting devices used for detecting particles and electroma...
We have measured the effects of dilute magnetic-atom doping on the superconducting transition temper...
A superconducting Transition-Edge Sensor (TES) with low- T c is essential in high resolution calorim...