Negative differential resistance (NDR) devices are proposed with ultra-high peak-to-valley current ratio (PVCR) over 10 4 based on silicon nanowire structure
International audienceField emission (FE) from semiconducting nanowires (NWs) is studied for expandi...
International audienceField emission (FE) from semiconducting nanowires (NWs) is studied for expandi...
A new mechanism for negative differential resistance (NDR) is discovered in three-terminal graphene ...
We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley curr...
The current-voltage characteristics of a silicon nanochain is investigated. The nanochain is viewed ...
In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-...
In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-...
We propose a novel double-peak negative differential resistance (NDR) characteristic at the conventi...
We propose a novel multiple negative differential resistance (NDR) device with the positive inclined...
We propose a novel double-peak negative differential resistance (NDR) characteristic at the conventi...
We propose and experimentally demonstrate a novel circuit based on graphene FETs (GFETs) showing exc...
International audienceField emission (FE) from semiconducting nanowires (NWs) is studied for expandi...
Si-based resonant bipolar transistors are demonstrated by the monolithic vertical integration of Si-...
Abstract Negative differential resistance (NDR) is a phenomenon in which an increase in voltage acro...
International audienceField emission (FE) from semiconducting nanowires (NWs) is studied for expandi...
International audienceField emission (FE) from semiconducting nanowires (NWs) is studied for expandi...
International audienceField emission (FE) from semiconducting nanowires (NWs) is studied for expandi...
A new mechanism for negative differential resistance (NDR) is discovered in three-terminal graphene ...
We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley curr...
The current-voltage characteristics of a silicon nanochain is investigated. The nanochain is viewed ...
In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-...
In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-...
We propose a novel double-peak negative differential resistance (NDR) characteristic at the conventi...
We propose a novel multiple negative differential resistance (NDR) device with the positive inclined...
We propose a novel double-peak negative differential resistance (NDR) characteristic at the conventi...
We propose and experimentally demonstrate a novel circuit based on graphene FETs (GFETs) showing exc...
International audienceField emission (FE) from semiconducting nanowires (NWs) is studied for expandi...
Si-based resonant bipolar transistors are demonstrated by the monolithic vertical integration of Si-...
Abstract Negative differential resistance (NDR) is a phenomenon in which an increase in voltage acro...
International audienceField emission (FE) from semiconducting nanowires (NWs) is studied for expandi...
International audienceField emission (FE) from semiconducting nanowires (NWs) is studied for expandi...
International audienceField emission (FE) from semiconducting nanowires (NWs) is studied for expandi...
A new mechanism for negative differential resistance (NDR) is discovered in three-terminal graphene ...