Integrated single photon source of InAs quantum dot with silicon-based photonic circuits

A single photon source is an essential element for the photonic quantum information applications including the quantum communication, the quantum simulation, and the quantum computation [1,2]. Semiconductor quantum dots (QDs) have been widely considered as a promising platform for the single photon source due to their various advantages of manipulation and integration with various photonic elements. To realize the on-chip quantum devices, there have been numerous effort to integrate III-V QDs with silicon-based photonic circuits [3,4]. However the self-assembled QDs have inherent drawbacks of irregular size distribution and random position. To overcome these drawbacks, various methods have been studied to obtain the site-controlled QDs such as the pyramid, the inverted pyramid, the nanohole, and the spatially selective H incorporation techniques [5]. In this study, we obtained site-controlled InAs QDs by the selective-area growth (SAG) method and integrated single photon source with the silicon-based photonic circuits through the micro-transfer technique