In long-term stability, however, most of these organic devices are vulnerable to moisture, oxygen,etc. To prevent the moisture in the air, highly dense film is required as a barrier. In this research, we studied thermally grown SiO<SUB>2</SUB> film as an encapsulation film as we expected thermally grown silicon dioxide film to have ultra-low water permeability and high elasticity due to its rare defects, high density and high uniformity. We increased elastic deformation limit of thermally grown silicon dioxide film to apply on stretchable devices. To increase elastic deformation limit, the thickness of thermally grown SiO<SUB>2</SUB> films were decreased to observe thickness effect. Although thick SiO<SUB>2<...
107 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.The behavior of compressive s...
Silicon dioxide is common low-refractive index material used for example in optical interference coa...
This letter investigates flexible polycrystalline silicon thin film transistor performance variation...
Thermally grown silicon dioxide film is an important material in integrated circuits (ICs) as gate o...
Silicon dioxide film has become one of the candidates for encapsulation layer due to its low water p...
Silicon dioxide film can be used as components in devices such as insulator and encapsulation materi...
As interest in stretchable devices is increasing, researches on stretchable optoelectronic devices b...
Organic components in organic electronic device are vulnerable to external environment such as high ...
Department of Materials Science and EngineeringIn recent, Stretchable displays are being actively re...
Organic components in organic electronic device are vulnerable to external environment such as high ...
To ensure chemical stability and long-term operation, organic electronic devices require encapsulati...
Recently, organic electronic devices are widely studied for flexible applications. Organic component...
Enhanced biaxial stretchability of highly impermeable SiO2 encapsulation thin film with wrinkle stru...
Silicon dioxide (SiO2) has great potential to be used for thin-film encapsulation for flexible elect...
The durability of thin film optical interference filters, integrated in systems ranging from imaging...
107 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.The behavior of compressive s...
Silicon dioxide is common low-refractive index material used for example in optical interference coa...
This letter investigates flexible polycrystalline silicon thin film transistor performance variation...
Thermally grown silicon dioxide film is an important material in integrated circuits (ICs) as gate o...
Silicon dioxide film has become one of the candidates for encapsulation layer due to its low water p...
Silicon dioxide film can be used as components in devices such as insulator and encapsulation materi...
As interest in stretchable devices is increasing, researches on stretchable optoelectronic devices b...
Organic components in organic electronic device are vulnerable to external environment such as high ...
Department of Materials Science and EngineeringIn recent, Stretchable displays are being actively re...
Organic components in organic electronic device are vulnerable to external environment such as high ...
To ensure chemical stability and long-term operation, organic electronic devices require encapsulati...
Recently, organic electronic devices are widely studied for flexible applications. Organic component...
Enhanced biaxial stretchability of highly impermeable SiO2 encapsulation thin film with wrinkle stru...
Silicon dioxide (SiO2) has great potential to be used for thin-film encapsulation for flexible elect...
The durability of thin film optical interference filters, integrated in systems ranging from imaging...
107 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.The behavior of compressive s...
Silicon dioxide is common low-refractive index material used for example in optical interference coa...
This letter investigates flexible polycrystalline silicon thin film transistor performance variation...