Link to conference program: http://www.his.com/~iitc/techprogram09.htmlThe critical challenges of removal of post metal hard mask etch photo resist removal and post low-k etch residue removal are described. An overview of some new nonplasma based approaches is presented.status: publishe
As the device dimensions scale to 100 nm, the use of photoresist materials is suitable for lithogra...
The predominant factors that contribute to the formation of polymer on the bottom and sidewalls of v...
Plasma induced damage of ultra low-k (ULK) dielectrics is a common phenomenon in BEOL interconnects....
This work mainly focuses on the post-etch treatment (PET) in dielectric etch processes from contact ...
(invited paper)Degradation of porous low dielectric constant materials during their exposure in etch...
Wet processes are gaining renewed interest for the removal of post-etch photoresist on porous dielec...
Porous ultra low constant materials (ULK) for isolation within the interconnect system of integrated...
This paper describes a three-step process regime for the integration of porous SiCOH based ultra low...
Compound semiconductor processing often uses high density plasma etching to establish through-via me...
Via represents the weakest link in multilevel metallisation for IC devices and oxide etching is inhe...
Resistance-capacitance delay, crosstalk, and power dissipation associated with the increasing capaci...
Photostabilization is a widely used post lithographic resist treatment process, which allows to hard...
Plasma induced damage of ultra low-k (ULK) dielectrics is a common phenomenon in BEOL interconnects....
This work focuses on the study of the interactions between plasmas used in microelectronic processes...
© 2014 The Electrochemical Society. The pore stuffing method is studied with the objective of improv...
As the device dimensions scale to 100 nm, the use of photoresist materials is suitable for lithogra...
The predominant factors that contribute to the formation of polymer on the bottom and sidewalls of v...
Plasma induced damage of ultra low-k (ULK) dielectrics is a common phenomenon in BEOL interconnects....
This work mainly focuses on the post-etch treatment (PET) in dielectric etch processes from contact ...
(invited paper)Degradation of porous low dielectric constant materials during their exposure in etch...
Wet processes are gaining renewed interest for the removal of post-etch photoresist on porous dielec...
Porous ultra low constant materials (ULK) for isolation within the interconnect system of integrated...
This paper describes a three-step process regime for the integration of porous SiCOH based ultra low...
Compound semiconductor processing often uses high density plasma etching to establish through-via me...
Via represents the weakest link in multilevel metallisation for IC devices and oxide etching is inhe...
Resistance-capacitance delay, crosstalk, and power dissipation associated with the increasing capaci...
Photostabilization is a widely used post lithographic resist treatment process, which allows to hard...
Plasma induced damage of ultra low-k (ULK) dielectrics is a common phenomenon in BEOL interconnects....
This work focuses on the study of the interactions between plasmas used in microelectronic processes...
© 2014 The Electrochemical Society. The pore stuffing method is studied with the objective of improv...
As the device dimensions scale to 100 nm, the use of photoresist materials is suitable for lithogra...
The predominant factors that contribute to the formation of polymer on the bottom and sidewalls of v...
Plasma induced damage of ultra low-k (ULK) dielectrics is a common phenomenon in BEOL interconnects....