Hot carrier-induced emission from the InGaN/GaN light-emitting diode by characterizing reverse-bias electroluminescence

[[abstract]]Reverse-bias operations can test the robustness and screen the weaknesses of the light emitting diode device for a shorter period of several hours. The mechanism of the hot carrier-induced emission, which is distinct from the yellow luminescence and the band-to-band recombination, has been confirmed by electroluminescence observations and hot carrier-induced equation. Furthermore, the degradation of electrical properties and failure of the device have been confirmed by the reverse-bias constant-current and constant-voltage stress. Focus ion beam, scanning electron microscopy, and energy dispersive X-ray spectroscopy reveal that deformed metal line might be a possible origin of reverse-bias luminescence because of high electric field. (C) 2013 AIP Publishing LLC. [http://dx.doi.org.ezproxy.lib.ncu.edu.tw/10.1063/1.4803016][[note]]SC