[[abstract]]Experiments were performed to study the effect of metal line width on electromigration characteristics for Cu interconnects, and the results revealed completely different electromigration behavior for long and short metal lines. The extracted critical current density j(c) due to back stress effect can explain the electromigration width effect for long and short metal lines. For long metal lines, the electromigration times to failure were found to be increased with increasing the line width, and the critical current density j(c) is lower and slightly increased for the wider metal line. On the other hand, the electromigration failure time was observed to be inversely proportional to the line width in the case of short metal lines....
Electromigration (EM) is a mass transport phenomenon resulting from the momentum transfer between th...
Reliability of interconnect via is increasing an important issue in submicron technology. Electromig...
Reliability of interconnect via is increasing an important issue in submicron technology. Electromig...
[[abstract]]Experiments were performed to study the effect of metal line width on electromigration c...
[[abstract]]Experiments were performed to study the effect of metal line width on electromigration c...
[[abstract]]Experiments were performed to study the effect of metal line width on electromigration c...
Electromigration is the mass transport of atoms in a material due to elevated temperatures and an ap...
Electromigration (EM) occurs in the form of void formation because of mass transport, reducing the e...
Electromigration (EM) occurs in the form of void formation because of mass transport, reducing the e...
textInterconnect scaling has given rise to serious reliability concerns under the impact of low k i...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
textInterconnect scaling has given rise to serious reliability concerns under the impact of low k i...
textThe continual downward scaling of devices and increases in drive current have required an ever ...
[[abstract]]The sub-micron damascene interconnects, electromigration is mainly due to the diffusion ...
Electromigration-induced stresses play a major role in the analysis and the explanation of this impo...
Electromigration (EM) is a mass transport phenomenon resulting from the momentum transfer between th...
Reliability of interconnect via is increasing an important issue in submicron technology. Electromig...
Reliability of interconnect via is increasing an important issue in submicron technology. Electromig...
[[abstract]]Experiments were performed to study the effect of metal line width on electromigration c...
[[abstract]]Experiments were performed to study the effect of metal line width on electromigration c...
[[abstract]]Experiments were performed to study the effect of metal line width on electromigration c...
Electromigration is the mass transport of atoms in a material due to elevated temperatures and an ap...
Electromigration (EM) occurs in the form of void formation because of mass transport, reducing the e...
Electromigration (EM) occurs in the form of void formation because of mass transport, reducing the e...
textInterconnect scaling has given rise to serious reliability concerns under the impact of low k i...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
textInterconnect scaling has given rise to serious reliability concerns under the impact of low k i...
textThe continual downward scaling of devices and increases in drive current have required an ever ...
[[abstract]]The sub-micron damascene interconnects, electromigration is mainly due to the diffusion ...
Electromigration-induced stresses play a major role in the analysis and the explanation of this impo...
Electromigration (EM) is a mass transport phenomenon resulting from the momentum transfer between th...
Reliability of interconnect via is increasing an important issue in submicron technology. Electromig...
Reliability of interconnect via is increasing an important issue in submicron technology. Electromig...