A low-power 63-GHz CMOS direct injection-locked frequency divider in 0.13-mu m CMOS technology

[[abstract]]A low-power 63-GHz (V-band) direct injection-locked frequency-divider (ILFD) using standard 0.13-mu m CMOS technology is reported. To reduce power consumption and enhance locking range, a PMOS switch directly coupled to the LC tank (output) of the ILFD is used to replace the traditional tail transistor for injection path. This ILFD architecture also features a very low input capacitance: thus, high operating frequeney of 63 GHz can be achieved. This direct ILFD consumes 5.79 mW with locking range of 1.86 GHz (61.24-63.1 GHz). The chip area was only 0.585 x 0.38 mm(2) excluding the test pads. (C) 2008 Wiley Periodicals, Inc.[[note]]SC