0.99 mW 3-10 GHz common-gate CMOS UWB LNA using T-match input network and self-body-bias technique

[[abstract]]A low-power 3-10 GHz common-gate CMOS ultra-wideband (UWB) low-noise amplifier (LNA) using a T-match input network and the selfbody- bias technique is demonstrated. Wideband input impedance matching was achieved by using the proposed T-match input network to improve the input matching at low frequencies. A low supply voltage of 1.1 V (for two V(DS) drops) was achieved by using the self-body-bias technique to reduce the threshold voltage (V(th)) of the transistors, which leads to a low power consumption (P(D)). At V(G) = 0.77 V, the LNA consumed 2.15 mW and achieved S(11) of -10.4 to -35.5 dB, S(21) of 10.4 dB, and an average NF of 4.9 dB over the 3-10 GHz band of interest. At V(G) = 0.63 V, the LNA consumed 0.99 mW and achieved S(11) of -10.7 to -35.8 dB, S(21) of 7.9 dB and an average NF of 6 dB. Both are the lowest P(D) ever reported for an UWB CMOS LNA with bandwidth greater than 6 GHz.[[note]]SC