In this thesis the surfaces of clean Ge(001), hydrogenated Ge(001) and Au-adsorbed Ge(001) has been studied using scanning tunneling microscopy. The analysis are motivated by the prediction that silicon electronics miniaturization will reach the quantum barrier around the year 2020. Scientists persist in efforts to develop new methods of production of electronic devices that circumvent this barrier. One of the most promising projects is AtMol. Its goal is to establish a comprehensive process flow for fabricating a molecular chip. The substract for a molecule growth will be a Ge(001) surface which is studied deeper in this thesis. The measurements were made using LT-STM microscope in ultra-high vacuum and temperatures of liquid helium (4.2 ...
Pt deposited on a Ge(001) surface spontaneously forms nanowire arrays. These nanowires are thermodyn...
In this paper we demonstrate atomic-scale lithography on hydrogenterminated Ge(001). The lithographi...
We use controlled annealing to tune the interfacial properties of a sub-monolayer and monolayer cove...
We describe a complete protocol for atomically precise dangling bond (DB) logic gate construction on...
THESIS 9905The miniaturisation trend in the construction of electronic devices has recently sparked ...
We demonstrate the preparation of a clean Ge(001) surface with minimal roughness (RMS similar to 0.6...
We demonstrate the preparation of a clean Ge(001) surface with minimal roughness (RMS similar to 0.6...
Niniejsza praca przedstawia doświadczenie polegające na utworzeniu 2-wymiarowych nanostruktur na pow...
The ongoing miniaturization of (components of) electronic devices will eventually need a totally new...
In this thesis we demonstrate phosphorus (P)-atomic layer doping of germanium (Ge)-basedmaterials in...
The (111) surfaces of Si and Ge were studied by scanning tunneling microscopy (STM) and photoelectro...
Pt deposited on a Ge(001) surface spontaneously forms nanowire arrays. These nanowires are thermodyn...
Pt deposited on a Ge(001) surface spontaneously forms nanowire arrays. These nanowires are thermodyn...
Resumen del trabajo presentado al Symposium on Surface Science (3S), celebrado en St. Christoph am A...
The drive toward miniaturization of electronic devices motivates investigations of atomic structures...
Pt deposited on a Ge(001) surface spontaneously forms nanowire arrays. These nanowires are thermodyn...
In this paper we demonstrate atomic-scale lithography on hydrogenterminated Ge(001). The lithographi...
We use controlled annealing to tune the interfacial properties of a sub-monolayer and monolayer cove...
We describe a complete protocol for atomically precise dangling bond (DB) logic gate construction on...
THESIS 9905The miniaturisation trend in the construction of electronic devices has recently sparked ...
We demonstrate the preparation of a clean Ge(001) surface with minimal roughness (RMS similar to 0.6...
We demonstrate the preparation of a clean Ge(001) surface with minimal roughness (RMS similar to 0.6...
Niniejsza praca przedstawia doświadczenie polegające na utworzeniu 2-wymiarowych nanostruktur na pow...
The ongoing miniaturization of (components of) electronic devices will eventually need a totally new...
In this thesis we demonstrate phosphorus (P)-atomic layer doping of germanium (Ge)-basedmaterials in...
The (111) surfaces of Si and Ge were studied by scanning tunneling microscopy (STM) and photoelectro...
Pt deposited on a Ge(001) surface spontaneously forms nanowire arrays. These nanowires are thermodyn...
Pt deposited on a Ge(001) surface spontaneously forms nanowire arrays. These nanowires are thermodyn...
Resumen del trabajo presentado al Symposium on Surface Science (3S), celebrado en St. Christoph am A...
The drive toward miniaturization of electronic devices motivates investigations of atomic structures...
Pt deposited on a Ge(001) surface spontaneously forms nanowire arrays. These nanowires are thermodyn...
In this paper we demonstrate atomic-scale lithography on hydrogenterminated Ge(001). The lithographi...
We use controlled annealing to tune the interfacial properties of a sub-monolayer and monolayer cove...