Comparative experimental study of junctionless and inversion-mode nanowire transistors for analog applications
- Bosch, Daphnée
- Colinge, J.P.
- Lugo, J.
- Tataridou, A.
- Theodorou, Christoforos
- Garros, X.
- Barraud, S.
- Lacord, J.
- Sklenard, B.
- Casse, M.
- Brunet, L.
- Batude, P.
- Fenouillet-Béranger, C.
- Lattard, D.
- Cluzel, J.
- Youcef, R. Nait
- Vizioz, C.
- Audoit, G.
- Balestra, F.
- Vinet, M.
- Andrieu, F.
Publication date
August 2020
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
International audienceWe fabricated junctionless and inversion-mode monocrystalline nanowire nMOSFETs down to L=18nm gate length and W=20nm width. We demonstrate record performance of nanowire junctionless transistors for analog applications: AVT=1.4mV.μm matching, Av0=62dB gain (L=200nm), fT=126GHz cutoff frequency and fMAX=182GHz maximum operating frequency (L=35nm). Junctionless transistor performances even exceed those of inversion-mode ones in terms of back-bias capability, low-frequency noise, hot-carrier degradation and fMAX. This is explained by junctionless physics: channel length modulation, bulk conduction and high channel-depth sensitivity to back bias
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