The time-of-flight technique is used on a small-angle neutron scattering instrument to separate the energies of the scattered neutrons, in order to determine the origin of the temperature-dependent scattering observed from silicon at Q > similar to 0.1 angstrom(-1). A quantitative analysis of the results in comparison with the phonon dispersion curves, determined by Dolling using a triple-axis neutron spectrometer, shows that the temperature-dependent scattering can be understood in terms of Umklapp processes whereby neutrons gain energy from phonons
A transistorized, neutron time-of-flight spectrometer has been designed and built for measurement of...
Differential cross sections of elastic and inelastic neutron scattering on elemental silicon were de...
We present a comprehensive scattering study of nanostructured silicon. Neutron and x ray scattering ...
In this study we present the ionizing energy depositions in a 300 μm thick silicon layer after fast ...
In order to have a better understanding of the atomic nucleus, a variety of nuclear reactions should...
SANS has been used to measure the diffusion coefficient of oxygen in silicon in the temperature rang...
The diffusion of interstitial oxygen In silicon at 525 degrees C is studied using time-of-flight sma...
Phonon, a quantized lattice vibration, plays an important role in the materials’ physical and mechan...
SIGLEAvailable from British Library Document Supply Centre- DSC:9091.9(MPD/NBS--283) / BLDSC - Briti...
Inelastic neutron scattering on a single crystal of silicon was performed at temperatures from 100 t...
We have measured the ionization efficiency of silicon nuclear recoils with kinetic energy between 1....
To study and control the incoherent inelastic background in small-angle neutron scattering, which ma...
Grazing incidence small angle neutron scattering (GISANS) overcomes the limitations of conventional ...
Precise estimation of neutron thermalization in moderators relies on high-fidelity thermal scatterin...
AbstractThe determination of total cross section of a material as a function of neutron energy by me...
A transistorized, neutron time-of-flight spectrometer has been designed and built for measurement of...
Differential cross sections of elastic and inelastic neutron scattering on elemental silicon were de...
We present a comprehensive scattering study of nanostructured silicon. Neutron and x ray scattering ...
In this study we present the ionizing energy depositions in a 300 μm thick silicon layer after fast ...
In order to have a better understanding of the atomic nucleus, a variety of nuclear reactions should...
SANS has been used to measure the diffusion coefficient of oxygen in silicon in the temperature rang...
The diffusion of interstitial oxygen In silicon at 525 degrees C is studied using time-of-flight sma...
Phonon, a quantized lattice vibration, plays an important role in the materials’ physical and mechan...
SIGLEAvailable from British Library Document Supply Centre- DSC:9091.9(MPD/NBS--283) / BLDSC - Briti...
Inelastic neutron scattering on a single crystal of silicon was performed at temperatures from 100 t...
We have measured the ionization efficiency of silicon nuclear recoils with kinetic energy between 1....
To study and control the incoherent inelastic background in small-angle neutron scattering, which ma...
Grazing incidence small angle neutron scattering (GISANS) overcomes the limitations of conventional ...
Precise estimation of neutron thermalization in moderators relies on high-fidelity thermal scatterin...
AbstractThe determination of total cross section of a material as a function of neutron energy by me...
A transistorized, neutron time-of-flight spectrometer has been designed and built for measurement of...
Differential cross sections of elastic and inelastic neutron scattering on elemental silicon were de...
We present a comprehensive scattering study of nanostructured silicon. Neutron and x ray scattering ...