This paper summarizes research aimed at understanding the sub-bandgap ultrafast photoconductivity (~1550 nm) in heavily doped GaAs:Er, and why it is comparable in strength and THz performance to traditional cross-gap (≈800 nm) performance
Terahertz (THz) spectroscopy with high sensitivity is essential for biological application consideri...
\u3cp\u3eWe demonstrate a novel technique that enables the sub-diffraction near-field study of photo...
This dissertation entails the investigation of ultrafast photoconductive (PC) THz sources driven by ...
Since the 1990s the photoconductive material of choice for THz generation has been low-temperature g...
Since the 1990s the photoconductive material of choice for THz generation has been low-temperature g...
Since the 1990s the photoconductive material of choice for THz generation has been low-temperature g...
Since the 1990s the photoconductive material of choice for THz generation has been low-temperature g...
Ultrafast 1550-nm extrinsic photoconductivity in GaAs:Er makes it possible to fabricate THz photocon...
We present a study of room-temperature, ultrafast photoconductivity associated with a strong, sub-ba...
We present measurements of sub-bandgap photoconductivity and photoconductive switches using GaAs dop...
A model is constructed for extrinsic photoconductivity in GaAs heavily doped with Er and driven arou...
We present the performance of ultrafast ErAs:GaAs photoconductive-switch antennas measured with a 15...
International audienceWe study low-temperature-grown GaAs (LT-GaAs) based ultrafast Fabry-Pérot cavi...
An Er:GaAs-based 1550-nm CW photomixer is demonstrated. The related mechanism is extrinsic photocond...
Superior ultrafast photoconductive properties make low temperature grown (LT) GaAs one of the best m...
Terahertz (THz) spectroscopy with high sensitivity is essential for biological application consideri...
\u3cp\u3eWe demonstrate a novel technique that enables the sub-diffraction near-field study of photo...
This dissertation entails the investigation of ultrafast photoconductive (PC) THz sources driven by ...
Since the 1990s the photoconductive material of choice for THz generation has been low-temperature g...
Since the 1990s the photoconductive material of choice for THz generation has been low-temperature g...
Since the 1990s the photoconductive material of choice for THz generation has been low-temperature g...
Since the 1990s the photoconductive material of choice for THz generation has been low-temperature g...
Ultrafast 1550-nm extrinsic photoconductivity in GaAs:Er makes it possible to fabricate THz photocon...
We present a study of room-temperature, ultrafast photoconductivity associated with a strong, sub-ba...
We present measurements of sub-bandgap photoconductivity and photoconductive switches using GaAs dop...
A model is constructed for extrinsic photoconductivity in GaAs heavily doped with Er and driven arou...
We present the performance of ultrafast ErAs:GaAs photoconductive-switch antennas measured with a 15...
International audienceWe study low-temperature-grown GaAs (LT-GaAs) based ultrafast Fabry-Pérot cavi...
An Er:GaAs-based 1550-nm CW photomixer is demonstrated. The related mechanism is extrinsic photocond...
Superior ultrafast photoconductive properties make low temperature grown (LT) GaAs one of the best m...
Terahertz (THz) spectroscopy with high sensitivity is essential for biological application consideri...
\u3cp\u3eWe demonstrate a novel technique that enables the sub-diffraction near-field study of photo...
This dissertation entails the investigation of ultrafast photoconductive (PC) THz sources driven by ...