The article of record as published may be found at http://dx.doi.org/101109/23.659047Computer simulation results are reported on transistor design and single-event charge collection modeling of metal-semiconductor field effect transistors (MESFETs) fabricated in the Vitesse H-GaAsIII{reg_sign} process on Low Temperature grown (LT) GaAs epitaxial layers. Tradeoffs in Single Event Upset (SEU) immunity and transistor design are discussed. Effects due to active loads and diffusion barriers are examined
The use of ion-beam etching for the controllable formation of very thin active channel layers in GaA...
The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involve...
Graduation date: 1984The electrical properties of ion-implanted GaAs FET channels\ud are investigate...
The article of record as published may be found at http://dx.doi.org/10.1109/23.659047IEEE Transacti...
The availability of high quality semi-insulating GaAs substrates is essential to the development of ...
Two 2” Gallium Arsenide wafers underwent MBE deposition processing to create two differing epitaxial...
Metal semiconductor field effect transistors (MESFET's) with 0.1 $\mu$m and 50 nm gate-lengths have ...
The object of the work described in this thesis was to fabricate GaAs Metal-Semiconductor Field Effe...
The article of record as published may be found at https://doi.org/10.1109/23.488786An introduction ...
The primary objective of the work described in this thesis was to study the influence of undoped LEC...
The purpose of this work was to study certain aspects of device fabrication and material properties ...
In this work, the effect of the radiation on the current-voltage characteristics of device GaAs meta...
The purpose of the work described in this thesis was to study the use of GaAs MESFETs in digital log...
Gallium arsenide transistors have a distinct advantage over silicon in terms of speed, with much hig...
We propose a new model for GaAs MESFFETs that we incorporated into a circuit simulator. The improvem...
The use of ion-beam etching for the controllable formation of very thin active channel layers in GaA...
The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involve...
Graduation date: 1984The electrical properties of ion-implanted GaAs FET channels\ud are investigate...
The article of record as published may be found at http://dx.doi.org/10.1109/23.659047IEEE Transacti...
The availability of high quality semi-insulating GaAs substrates is essential to the development of ...
Two 2” Gallium Arsenide wafers underwent MBE deposition processing to create two differing epitaxial...
Metal semiconductor field effect transistors (MESFET's) with 0.1 $\mu$m and 50 nm gate-lengths have ...
The object of the work described in this thesis was to fabricate GaAs Metal-Semiconductor Field Effe...
The article of record as published may be found at https://doi.org/10.1109/23.488786An introduction ...
The primary objective of the work described in this thesis was to study the influence of undoped LEC...
The purpose of this work was to study certain aspects of device fabrication and material properties ...
In this work, the effect of the radiation on the current-voltage characteristics of device GaAs meta...
The purpose of the work described in this thesis was to study the use of GaAs MESFETs in digital log...
Gallium arsenide transistors have a distinct advantage over silicon in terms of speed, with much hig...
We propose a new model for GaAs MESFFETs that we incorporated into a circuit simulator. The improvem...
The use of ion-beam etching for the controllable formation of very thin active channel layers in GaA...
The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involve...
Graduation date: 1984The electrical properties of ion-implanted GaAs FET channels\ud are investigate...
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