CdSe is a direct band gap semiconductor belonging to the II–VI group and possessing excellent optoelectronic properties. Thin film transistors and image intensifier tubes have been fabricated with this material. It is also a very stable photo anode in wet photovoltaic cells. Several physical and chemical techniques are available for the growth of thin films of CdSe [1–5]. Though results on brush plated CdSe films have been reported earlier [6], the films were deposited on room temperature substrates. To our knowledge, this is the first report on CdSe films grown by the brush plating technique on substrates maintained at higher temperatures
Thin film solar cells based on cadmium telluride (CdTe) are complex devices which have great potenti...
CdSe is one of the well known II-VI semiconductor materials having a band gap of 1.74 eV, suitable f...
Pure CdSe films have been deposited on glass substrates by a solution growth technique. Spectral dis...
CdSe thin films were brush plated on conducting glass and titanium substrates maintained at temperat...
CdSe thin films were brush plated on substrates maintained at temperatures in the range 30–90 1C fr...
The brush plating technique has been employed for the first time to obtain CdSe films on Ti and cond...
CdSexTe1−x films have been deposited by the brush plating technique for the first time, on titanium...
Cadmium sulphide thin films have been grown using a modified chemical bath deposition method with fo...
Cadmium sulfide films were deposited by the brush plating technique on titanium and conducting glass...
Polycrystalline cadmium selenide thin films are prepared in different thicknesses and substrate temp...
CdSe polycrystalline thin films were grown onto glass substrates by chemical bath deposition at 65 d...
Deposit ion of CdSe thin films f rom chemical baths containing cadmium citrate or cadmium tartrate c...
CdSe thin films were pulse electrodeposited at room temperature and at different duty cycles in the ...
CdTe thin films were brush plated on substrates maintained at temperatures in the range 30–90 1C fro...
Systematic studies of cadmium selenide thin films were prepared by without and with pulse reversal p...
Thin film solar cells based on cadmium telluride (CdTe) are complex devices which have great potenti...
CdSe is one of the well known II-VI semiconductor materials having a band gap of 1.74 eV, suitable f...
Pure CdSe films have been deposited on glass substrates by a solution growth technique. Spectral dis...
CdSe thin films were brush plated on conducting glass and titanium substrates maintained at temperat...
CdSe thin films were brush plated on substrates maintained at temperatures in the range 30–90 1C fr...
The brush plating technique has been employed for the first time to obtain CdSe films on Ti and cond...
CdSexTe1−x films have been deposited by the brush plating technique for the first time, on titanium...
Cadmium sulphide thin films have been grown using a modified chemical bath deposition method with fo...
Cadmium sulfide films were deposited by the brush plating technique on titanium and conducting glass...
Polycrystalline cadmium selenide thin films are prepared in different thicknesses and substrate temp...
CdSe polycrystalline thin films were grown onto glass substrates by chemical bath deposition at 65 d...
Deposit ion of CdSe thin films f rom chemical baths containing cadmium citrate or cadmium tartrate c...
CdSe thin films were pulse electrodeposited at room temperature and at different duty cycles in the ...
CdTe thin films were brush plated on substrates maintained at temperatures in the range 30–90 1C fro...
Systematic studies of cadmium selenide thin films were prepared by without and with pulse reversal p...
Thin film solar cells based on cadmium telluride (CdTe) are complex devices which have great potenti...
CdSe is one of the well known II-VI semiconductor materials having a band gap of 1.74 eV, suitable f...
Pure CdSe films have been deposited on glass substrates by a solution growth technique. Spectral dis...