CdSexTe1−x films have been deposited by the brush plating technique for the first time, on titanium and conducting glass substrates at room temperature. These films were annealed in argon atmosphere at 475◦C for 15 min. Their structural, optical and photoelectrochemical (PEC) properties are presented and discussed. The power conversion efficiency has been found to be 9.0% at 60 mW cm−2 white light illumination. A peak quantum efficiency of 0.7 has been obtained for the films of composition CdSe0.7Te0.3. Donor concentration of 1017 cm−3 and electron mobility of 60 cm2 V−1 sec−1 were obtained
CdS films were deposited by the pulse plating technique at room temperature and at different duty cy...
CdSxSe1-x films were deposited by the electron beam evaporation technique on glass substrates at dif...
Thin films of cadmium selenide (CdSe) as a semiconductor is well suited for opto-electronic applicat...
The brush plating technique has been employed for the first time to obtain CdSe films on Ti and cond...
CdSe thin films were brush plated on substrates maintained at temperatures in the range 30–90 1C fr...
CdSxTe1-x films were deposited on titanium and conducting glass substrates at room temperature using...
CdSe thin films were brush plated on conducting glass and titanium substrates maintained at temperat...
Thin films of CdSexTe1-x were prepared on SnO2 and Ti substrates by the electrodeposition technique....
CdSe is a direct band gap semiconductor belonging to the II–VI group and possessing excellent optoe...
The structural and photoelectrochemical (PEC) properties of vacuum evaporated CdSe films using the l...
Cadmium sulphide (CdS) films were deposited by the pulse plating technique at room temperature and ...
In this paper the optical and photoelectrical properties of CdSxSe1–x films prepared using the scree...
The aim of this study is to investigate the structural, optical and electrical properties of ternary...
CdSexTe1x thin filmswith 0 < x < 1 were deposited on titanium and conducting glass substrates by pul...
CdSe films were deposited by the pulse plating technique in the presence of silicotungstic acid.The...
CdS films were deposited by the pulse plating technique at room temperature and at different duty cy...
CdSxSe1-x films were deposited by the electron beam evaporation technique on glass substrates at dif...
Thin films of cadmium selenide (CdSe) as a semiconductor is well suited for opto-electronic applicat...
The brush plating technique has been employed for the first time to obtain CdSe films on Ti and cond...
CdSe thin films were brush plated on substrates maintained at temperatures in the range 30–90 1C fr...
CdSxTe1-x films were deposited on titanium and conducting glass substrates at room temperature using...
CdSe thin films were brush plated on conducting glass and titanium substrates maintained at temperat...
Thin films of CdSexTe1-x were prepared on SnO2 and Ti substrates by the electrodeposition technique....
CdSe is a direct band gap semiconductor belonging to the II–VI group and possessing excellent optoe...
The structural and photoelectrochemical (PEC) properties of vacuum evaporated CdSe films using the l...
Cadmium sulphide (CdS) films were deposited by the pulse plating technique at room temperature and ...
In this paper the optical and photoelectrical properties of CdSxSe1–x films prepared using the scree...
The aim of this study is to investigate the structural, optical and electrical properties of ternary...
CdSexTe1x thin filmswith 0 < x < 1 were deposited on titanium and conducting glass substrates by pul...
CdSe films were deposited by the pulse plating technique in the presence of silicotungstic acid.The...
CdS films were deposited by the pulse plating technique at room temperature and at different duty cy...
CdSxSe1-x films were deposited by the electron beam evaporation technique on glass substrates at dif...
Thin films of cadmium selenide (CdSe) as a semiconductor is well suited for opto-electronic applicat...