CdSe thin films were brush plated on conducting glass and titanium substrates maintained at temperatures in the range 5–30 ◦C from the precursors. The films exhibited hexagonal structure. Optical band gap was found to vary in the range of 1.65–2.1 eV as the substrate temperature is decreased from 30 ◦C. XPS measurements indicated the formation of CdSe. Atomic force microscopy studies indicated fine grains of the order of 10 nm for the films deposited at 5 ◦C. Luminescence measurement indicated emission at 520 nm for an excitation of 570 nm
Cadmium selenide thin films with different pH values (pH = 10, 11, 12 and 13) are produced on glass ...
A polycrystalline CdSe thin films doped with (5wt%) of Cu was fabricated using vacuum evaporation te...
Cadmium selenide thin films with different pH values (pH = 10, 11, 12 and 13) are produced on glass ...
CdSe is a direct band gap semiconductor belonging to the II–VI group and possessing excellent optoe...
Cadmium sulfide films were deposited by the brush plating technique on titanium and conducting glass...
The brush plating technique has been employed for the first time to obtain CdSe films on Ti and cond...
CdSe films have been deposited on glass substrates at different substrate temperatures between room ...
CdSe thin film was produced via chemical bath deposition at 50 degrees C. Transmittance, absorption,...
CdSe polycrystalline thin films were grown onto glass substrates by chemical bath deposition at 65 d...
CdSe is one of the significant members of II-VI type semiconducting family and it has a wide range o...
We report studies of photoluminescence, Raman scattering and x-ray diffraction performed on CdSe pol...
CdSexTe1−x films have been deposited by the brush plating technique for the first time, on titanium...
Thin films of cadmium selenide (CdSe) as a semiconductor is well suited for opto-electronic applicat...
CdSe thin films were brush plated on substrates maintained at temperatures in the range 30–90 1C fr...
CdTe thin films were brush plated on substrates maintained at temperatures in the range 30–90 1C fro...
Cadmium selenide thin films with different pH values (pH = 10, 11, 12 and 13) are produced on glass ...
A polycrystalline CdSe thin films doped with (5wt%) of Cu was fabricated using vacuum evaporation te...
Cadmium selenide thin films with different pH values (pH = 10, 11, 12 and 13) are produced on glass ...
CdSe is a direct band gap semiconductor belonging to the II–VI group and possessing excellent optoe...
Cadmium sulfide films were deposited by the brush plating technique on titanium and conducting glass...
The brush plating technique has been employed for the first time to obtain CdSe films on Ti and cond...
CdSe films have been deposited on glass substrates at different substrate temperatures between room ...
CdSe thin film was produced via chemical bath deposition at 50 degrees C. Transmittance, absorption,...
CdSe polycrystalline thin films were grown onto glass substrates by chemical bath deposition at 65 d...
CdSe is one of the significant members of II-VI type semiconducting family and it has a wide range o...
We report studies of photoluminescence, Raman scattering and x-ray diffraction performed on CdSe pol...
CdSexTe1−x films have been deposited by the brush plating technique for the first time, on titanium...
Thin films of cadmium selenide (CdSe) as a semiconductor is well suited for opto-electronic applicat...
CdSe thin films were brush plated on substrates maintained at temperatures in the range 30–90 1C fr...
CdTe thin films were brush plated on substrates maintained at temperatures in the range 30–90 1C fro...
Cadmium selenide thin films with different pH values (pH = 10, 11, 12 and 13) are produced on glass ...
A polycrystalline CdSe thin films doped with (5wt%) of Cu was fabricated using vacuum evaporation te...
Cadmium selenide thin films with different pH values (pH = 10, 11, 12 and 13) are produced on glass ...
Add to ORKG