Pulse electrodeposited zinc selenide films and their characteristics

Zinc selenide (ZnSe) thin films were pulse deposited for the first time using polycyclic acid. The films exhibited hexagonal structure. The band gap of the films varied in the range of 2.7 – 3.1 eV as the concentration of silico-tungstic acid increased. Atomic force microscopy indicated grain size decreased from 60 – 15 nm after addition of silicotungstic acid. Laser Raman spectrum exhibited LO phonons corresponding to ZnSe. The photoluminescence spectrum peaks at 675 nm. As the concentration of silico-tungstic acid increases, the PL emission peak shifts to shorter wavelenghths