Add to ORKGCdSe films were deposited by the pulse plating technique in the presence of silicotungstic acid.The films deposited in the presence of silicotungstic acid exhibited hexagonal structure. The films exhibited a direct band gap of 1.67 eV. With addition of silsicotungstic acid, the average grain size decreased from 17.1 nm to 11.7 nm, and the grain became more homogeneous.The surface roughness decreased from 2.83 nm to 1.97 ater adding silicotungstic acid.The efficiency of the photoelectrochemical cells increases with addition of silico-tungstic acid
CdSxTe1-x films were deposited on titanium and conducting glass substrates at room temperature using...
Thin films of cadmium selenide were cathodically deposited on ITO, molybdenum and stainless steel su...
The synthesis of polycrystalline thin films of zinc cadmium selenide from basic aqueous selenosulfit...
CdSe thin films were pulse electrodeposited at room temperature and at different duty cycles in the ...
In this paper we report the results on pulse electrodeposited cadmium selenide thin films using micr...
Cadmium sulphide (CdS) films were deposited by the pulse plating technique at room temperature and ...
Systematic studies of cadmium selenide thin films were prepared by without and with pulse reversal p...
Cadmium selenide (CdSe) thin films have been successfully prepared by the electrodeposition techniqu...
Cadmium selenide (CdSe) thin films have been successfully prepared by the electrodeposition techniqu...
Cadmium selenide thin films were electrodeposited on the indium tin oxide (ITO)conducting glass subs...
CdSe films were electrodeposited on pure nickel substrates. The nickel substrate was polished to a m...
CdSe films were electrodeposited on pure nickel substrates. The nickel substrate was polished to a m...
In this work, the optimal conditions for the electrodeposition of a CdSe film on n-Si were demonstra...
CdS films were deposited by the pulse plating technique at room temperature and at different duty cy...
CdSe thin films were brush plated on substrates maintained at temperatures in the range 30–90 1C fr...
CdSxTe1-x films were deposited on titanium and conducting glass substrates at room temperature using...
Thin films of cadmium selenide were cathodically deposited on ITO, molybdenum and stainless steel su...
The synthesis of polycrystalline thin films of zinc cadmium selenide from basic aqueous selenosulfit...
CdSe thin films were pulse electrodeposited at room temperature and at different duty cycles in the ...
In this paper we report the results on pulse electrodeposited cadmium selenide thin films using micr...
Cadmium sulphide (CdS) films were deposited by the pulse plating technique at room temperature and ...
Systematic studies of cadmium selenide thin films were prepared by without and with pulse reversal p...
Cadmium selenide (CdSe) thin films have been successfully prepared by the electrodeposition techniqu...
Cadmium selenide (CdSe) thin films have been successfully prepared by the electrodeposition techniqu...
Cadmium selenide thin films were electrodeposited on the indium tin oxide (ITO)conducting glass subs...
CdSe films were electrodeposited on pure nickel substrates. The nickel substrate was polished to a m...
CdSe films were electrodeposited on pure nickel substrates. The nickel substrate was polished to a m...
In this work, the optimal conditions for the electrodeposition of a CdSe film on n-Si were demonstra...
CdS films were deposited by the pulse plating technique at room temperature and at different duty cy...
CdSe thin films were brush plated on substrates maintained at temperatures in the range 30–90 1C fr...
CdSxTe1-x films were deposited on titanium and conducting glass substrates at room temperature using...
Thin films of cadmium selenide were cathodically deposited on ITO, molybdenum and stainless steel su...
The synthesis of polycrystalline thin films of zinc cadmium selenide from basic aqueous selenosulfit...