Conduction mechanisms in poly(3-hexylthiophene) thin-film sandwiched structures

Current density–voltage (J–V) characteristics of regioregular poly(3-hexylthiophene) (P3HT) thin-film sandwiched structures are studied and analyzed in this paper. Various material and trap parameters are estimated using the space-charge-limited conduction model with exponential trap distribution. Temperature-dependent J–V characteristics are examined to justify the bulk-limited transport in the material and trap density (Hβ) and characteristic constant (Et) are determined. The model is modified using field-dependent trap occupancy (FDTO) and compared. Both the models, with and without FDTO, fit the J–V curves at different temperatures. Though the model with FDTO fits the J–V curve slightly better at high voltages when compared to the model without FDTO, it cannot be established with certainty