Analytical modeling of the substrate influences on accumulation-mode SOI pMOSFETs at room temperature and at liquid nitrogen temperature

In this work a theoretical and experimental analysis of the substrate potential drop influence on fully depleted accumulation-mode p-channel silicon-on-insulator (SOI) MOSFETs at room temperature and at liquid nitrogen temperature is presented. A new model to account for the substrate influence into the accumulation-mode device conduction mechanisms is developed. The theoretical results are compared with MEDICI numerical bidimensional simulations in order to validate the proposed model. The substrate influence on the SOI MOSFET threshold voltages is given. Finally, a comparison between modeled and experimental data is realized. (C) 1997 Elsevier Science Ltd