Twin-gate structures consisting of the series combination of two short-channel SOI MOSFETs of different lengths with a common gate have previously demonstrated kink-free and very flat output characteristics. The authors observe and explain that when using long-channel fully-depleted twin-gates a kink-like effect reappears and seriously damages the output conductance
Kink effect can spoil the otherwise excellent low-noise performance of InAs/AlSb HEMTs. It has its o...
The kink effect in low-noise pseudomorphic (AlGaAs/InGaAs) HEMT's has been examined in detail by inv...
A new type of abnormal drain current (ADC) effect in fully depleted (FD) silicon-on-insulator (SOI) ...
International audienceSystematic experiments demonstrate the presence of the kink effect even in FDS...
session posterInternational audienceSystematic experiments demonstrate the presence of the kink effe...
Starting from an empirical non-linear model developed for deep sub-micron channel MOSFETs, we presen...
The kink effect can spoil the otherwise excellent low noise performance of InAs/AlSb high electron m...
Impact ionization is the main cause of the kink effect in the saturation region of the output charac...
[[abstract]]Two different explanations of the S-22 kink phenomenon in deep-submicrometer RF MOSFETs ...
[[abstract]]Two different explanations of the S-22 kink phenomenon in deep-submicrometer RF MOSFETs ...
Here, a new approach for calculating the triggering drain bias at the onset of the kink effect, kink...
[[abstract]]In this paper, the kink effect in scattering parameter S., of RF power MOSFETs with drai...
[[abstract]]In this paper, the kink effect in scattering parameter S., of RF power MOSFETs with drai...
Here we give a new approach for calculating triggering drain bias at the onset of the kink effect ut...
A semiclassical two-dimensional ensemble Monte Carlo simulator is used to perform a physical analysi...
Kink effect can spoil the otherwise excellent low-noise performance of InAs/AlSb HEMTs. It has its o...
The kink effect in low-noise pseudomorphic (AlGaAs/InGaAs) HEMT's has been examined in detail by inv...
A new type of abnormal drain current (ADC) effect in fully depleted (FD) silicon-on-insulator (SOI) ...
International audienceSystematic experiments demonstrate the presence of the kink effect even in FDS...
session posterInternational audienceSystematic experiments demonstrate the presence of the kink effe...
Starting from an empirical non-linear model developed for deep sub-micron channel MOSFETs, we presen...
The kink effect can spoil the otherwise excellent low noise performance of InAs/AlSb high electron m...
Impact ionization is the main cause of the kink effect in the saturation region of the output charac...
[[abstract]]Two different explanations of the S-22 kink phenomenon in deep-submicrometer RF MOSFETs ...
[[abstract]]Two different explanations of the S-22 kink phenomenon in deep-submicrometer RF MOSFETs ...
Here, a new approach for calculating the triggering drain bias at the onset of the kink effect, kink...
[[abstract]]In this paper, the kink effect in scattering parameter S., of RF power MOSFETs with drai...
[[abstract]]In this paper, the kink effect in scattering parameter S., of RF power MOSFETs with drai...
Here we give a new approach for calculating triggering drain bias at the onset of the kink effect ut...
A semiclassical two-dimensional ensemble Monte Carlo simulator is used to perform a physical analysi...
Kink effect can spoil the otherwise excellent low-noise performance of InAs/AlSb HEMTs. It has its o...
The kink effect in low-noise pseudomorphic (AlGaAs/InGaAs) HEMT's has been examined in detail by inv...
A new type of abnormal drain current (ADC) effect in fully depleted (FD) silicon-on-insulator (SOI) ...