Interpretation of Quasi-static C-v Characteristics of Mosos Capacitors On Soi Substrates
- Flandre, Denis
- Loo, T.
- Verlinden, P.
- Vandewiele, F.
Publication date
January 1991
DOI Publisher
Institution of Engineering and Technology (IET)Abstract
The fabrication of two-terminal MOSOS capacitors incorporating SOI substrates is described. Results of quasi-static C-V measurements are presented for the first time and compared to existing theoretical models. The suitability of the technique to assess rapidly the quality of an SOI MOS fabrication process is finally discussed
Add to ORKG