We report measurements of photo-luminescence from GaAs/AlGaAs heterojunctions in the ultra-quantum limit. New features are observed for low electron densities at high magnetic field, which we suggest are associated with the formation of negatively charged excitons, both singlet and triplet states. The dependence of the spectra on temperature and carrier density are presented in support of this theory. (C) 1998 Elsevier Science B.V. All rights reserved
The photoluminescence energy of the negatively charged excitons (X-) in a 100 Å GaAs/AlGaAs quantum ...
We present the results of photoluminescence experiments on the negatively charged exciton X- in GaAs...
We report on high-excitation photoluminescence (PL) measurements of an ensemble of InAs/GaAs self-as...
The magnetophotoluminescence (MPL) behavior of a GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As single hete...
We report on detailed investigations of low temperature (T = 2 K) polarisation-resolved photolumine...
We have studied the high magnetic field (less than or equal to 50 T) dependence of the negatively ch...
We have studied the photoluminescence energy of the negatively charged exciton for different polaris...
We have studied the low-temperature photoluminescence of the two-dimensional electron gas in a singl...
We have studied the low-temperature photoluminescence of high-mobility two-dimensional hole gases in...
We report the measurement of magnetophotoluminescence spectra in high-mobility GaAs/GaAlAs heterojun...
We present photoluminescence and reflectance spectra of GaAs/Al-x Ga-1-x As quantum wells in a magne...
Contains fulltext : 145271.pdf (publisher's version ) (Open Access
A centre Si delta-doped GaAs/Al0.33Ga0.67As double heterostructure has been studied by photoluminesc...
We study the energy structure of two-dimensional holes in p- type single Al1-xGaxAs/GaAs heterojunc...
We study the photoluminescence from the negatively charged (X−) trions and neutral (X) excitons, in ...
The photoluminescence energy of the negatively charged excitons (X-) in a 100 Å GaAs/AlGaAs quantum ...
We present the results of photoluminescence experiments on the negatively charged exciton X- in GaAs...
We report on high-excitation photoluminescence (PL) measurements of an ensemble of InAs/GaAs self-as...
The magnetophotoluminescence (MPL) behavior of a GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As single hete...
We report on detailed investigations of low temperature (T = 2 K) polarisation-resolved photolumine...
We have studied the high magnetic field (less than or equal to 50 T) dependence of the negatively ch...
We have studied the photoluminescence energy of the negatively charged exciton for different polaris...
We have studied the low-temperature photoluminescence of the two-dimensional electron gas in a singl...
We have studied the low-temperature photoluminescence of high-mobility two-dimensional hole gases in...
We report the measurement of magnetophotoluminescence spectra in high-mobility GaAs/GaAlAs heterojun...
We present photoluminescence and reflectance spectra of GaAs/Al-x Ga-1-x As quantum wells in a magne...
Contains fulltext : 145271.pdf (publisher's version ) (Open Access
A centre Si delta-doped GaAs/Al0.33Ga0.67As double heterostructure has been studied by photoluminesc...
We study the energy structure of two-dimensional holes in p- type single Al1-xGaxAs/GaAs heterojunc...
We study the photoluminescence from the negatively charged (X−) trions and neutral (X) excitons, in ...
The photoluminescence energy of the negatively charged excitons (X-) in a 100 Å GaAs/AlGaAs quantum ...
We present the results of photoluminescence experiments on the negatively charged exciton X- in GaAs...
We report on high-excitation photoluminescence (PL) measurements of an ensemble of InAs/GaAs self-as...