New RF Intrinsic Parameters Extraction Procedure for Advanced MOS Transistors
- Tinoco, J.C.
- Martinez-Lopez, A.G.
- Emam, Mostafa
- Raskin, Jean-Pierre
- 2010 23rd IEEE ICMTS International Conference on Microelectronic Test Structures (ICMTS 2010)
Publication date
January 2010
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
A new extraction method of the intrinsic parameters of the small-signal equivalent circuit model of SOI MOS transistors (MOSFET) is presented. This new method does not need the previous knowledge of the extrinsic series resistances, moreover, it is possible to directly determine the intrinsic parameters at the bias point of interest. Floating-Body SOI MOSFETs are analyzed using this method.Anglai
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