Characterization of ytterbium silicide formed in ultra high vacuum
- Laszcz, A.
- Ratajczak, J.
- Czerwinski, A.
- Katcki, J.
- Srot, V.
- Phillipp, F.
- van Aken, P.A.
- Yarekha, D.
- Reckinger, Nicolas
- Larrieu, G.
- Dubois, Emmanuel
- 16th International Conference on Microscopy of Semiconducting Materials
DOIAbstract
The formation of ytterbium silicide fabricated by annealing at 480 degrees C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi/sub 2-x/ phase, however, the structure is different from the hexagonal AlB/sub 2/ type.Anglai
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