High-frequency performance of dopant-segregated NiSi S/D SOI SB-MOSFETs

In this paper, we present fully-depleted Schottky barrier MOSFETs with dopant-segregated NiSi source and drain junctions. Schottky barrier MOSFETs with a channel length of 80 nm show high on-currents of 900 mu A/ mu m for n-type devices with As segregation and 427 mu A/ mu m for p-type devices with B segregation, respectively. A detailed high-frequency characterization proves the high performance of the devices with cut-off frequencies f/sub T/ of 117 GHz for n-type and 63 GHz for p-type Schottky barrier MOSFETs and clearly elucidates the effects of extrinsic and intrinsic device parameters as a function of gate length.Anglai