A measurement set-up has been developed to characterize the electrical response to a pulsed optical excitation on photo-induced switches. The hardware configuration is a combination of a 50 GHz LSNA and a laser modulated by a pulse generator. By making use of vector large-signal measurements, the pulse envelope response is measured which allows the study of transient effects as well as the determination of performance parameters such as excess carrier lifetime. It is demonstrated that depositing a passivation layer beneath the CPW transmission line switch reduces the carrier life time considerably.Anglai
In this paper, we presents the characterization technique of high-speed optoelectronics devices base...
In recent years there has been tremendous progress in the development of high-bandwidth semiconducto...
A novel ultra-wideband electromagnetic pulse generating method based on the photoconductive semicond...
Transient effects of optically modulated RF-switches, measured with a large-signal vector network an...
The shape and duration of photocurrent transients generated by a photoconductive switch depend on bo...
The bandwidth of frequency domain measurement methods of electrical signals has usually been far gre...
The aim of this work was to characterize and modelize a semiconductor photoswitch device that can ge...
Introduction. At present, an optical transmission of a microwave signal is of great scientific and p...
In this paper, we present a method for the characterization of the lifetime of photoinduced carriers...
High gain GaAs photoconductive semiconductor switches (PCSS) are being used in a variety of electric...
Abstract: In the design of communication systems like radio on fibre, an important step is the chara...
The linearity response of a photoconductive switch on microstrip line is presented at 2GHz. A silico...
The power handling performance of a photoconductive microwave switch up to an RF input power of 44dB...
Abstract. Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerabl...
The reduction of Photo-Induced excess carriers of a coplanar waveguide photo-induced RF switch on Hi...
In this paper, we presents the characterization technique of high-speed optoelectronics devices base...
In recent years there has been tremendous progress in the development of high-bandwidth semiconducto...
A novel ultra-wideband electromagnetic pulse generating method based on the photoconductive semicond...
Transient effects of optically modulated RF-switches, measured with a large-signal vector network an...
The shape and duration of photocurrent transients generated by a photoconductive switch depend on bo...
The bandwidth of frequency domain measurement methods of electrical signals has usually been far gre...
The aim of this work was to characterize and modelize a semiconductor photoswitch device that can ge...
Introduction. At present, an optical transmission of a microwave signal is of great scientific and p...
In this paper, we present a method for the characterization of the lifetime of photoinduced carriers...
High gain GaAs photoconductive semiconductor switches (PCSS) are being used in a variety of electric...
Abstract: In the design of communication systems like radio on fibre, an important step is the chara...
The linearity response of a photoconductive switch on microstrip line is presented at 2GHz. A silico...
The power handling performance of a photoconductive microwave switch up to an RF input power of 44dB...
Abstract. Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerabl...
The reduction of Photo-Induced excess carriers of a coplanar waveguide photo-induced RF switch on Hi...
In this paper, we presents the characterization technique of high-speed optoelectronics devices base...
In recent years there has been tremendous progress in the development of high-bandwidth semiconducto...
A novel ultra-wideband electromagnetic pulse generating method based on the photoconductive semicond...