Optical crosstalk reduction using a HR-Si substrate with trap-rich passivation layer

The efficiency of a coplanar waveguide photo- induced Radio Frequency switch on a High Resistivity Silicon substrate is presented. Experimental results from 40 MHz to 40 GHz demonstrate the important reduction of transmission line losses and optical crosstalk obtained by introducing a trap-rich passivation layer (crystallized amorphous silicon) at the interface between the high resistivity silicon substrate and the field oxide.Anglai